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VS-ETL015Y120H

P1-P3P4-P6P7-P9P10-P12P13-P13
VS-ETL015Y120H
www.vishay.com
Vishay Semiconductors
Revision: 16-Jun-16
4
Document Number: 94858
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Energy losses include “tail” and diode reverse recovery.
Note
(1)
Mounting surface flat, smooth, and greased
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
DTa1 - DTa2 - DTb1 - DTb2 AP DIODE
Diode reverse recovery time t
rr
V
R
= 400 V
I
F
= 20 A
dl/dt = 500 A/μs
- 127 - ns
Diode peak reverse current I
rr
-16- A
Diode recovery charge Q
rr
- 1020 - nC
Diode reverse recovery time t
rr
V
R
= 400 V
I
F
= 20 A
dl/dt = 500 A/μs, T
J
= 125 °C
- 153 - ns
Diode peak reverse current I
rr
-19- A
Diode recovery charge Q
rr
- 1464 - nC
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS
Resistance
R
25
T
C
= 25 °C 5000
:
R
100
T
C
= 100 °C 493 ± 5 %
B-value B
25/50
R
2
= R
25
exp. [B
25/50
(1/T
2
- 1/(298.15 K))] 3375 ± 5 % K
Maximum operating temperature 220 °C
Dissipation constant 2mW/°C
Thermal time constant 8s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
DbpA - DbpB Bypass diode - Junction to case thermal resistance (per diode)
R
thJC
- - 0.75
°C/W
Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Junction to case thermal resistance (per switch) - - 1.4
Da1 - Da2 - Db1 - Db2 Clamping diode - Junction to case thermal resistance (per diode) - - 1.56
DTa1 - DTa2 - DTb1 - DTb2 AP diode - Junction to case thermal resistance (per diode) - - 1.56
DbpA - DbpB Bypass diode - Case to sink thermal resistance (per diode)
R
thCS
(1)
-0.63-
Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Case to sink thermal resistance (per switch) - 0.96 -
Da1 - Da2 - Db1 - Db2 Clamping diode - Case to sink thermal resistance (per diode) - 1.1 -
DTa1 - DTa2 - DTb1 - DTb2 AP diode - Case to sink thermal resistance (per diode) - 1.1 -
Case to sink thermal resistance per module - 0.1 -
Mounting torque (M4) 2-3Nm
Weight -45- g
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
VS-ETL015Y120H
www.vishay.com
Vishay Semiconductors
Revision: 16-Jun-16
5
Document Number: 94858
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical DbpA -DbpB Bypass Diode
Forward Characteristics
Fig. 2 - Maximum DbpA -DbpB Bypass Diode
Forward Current vs. Case Temperature
Fig. 3 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Output Characteristics, V
GE
= 15 V
Fig. 4 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Output Characteristics, T
J
= 125 °C
Fig. 5 - Maximum Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Continuous Collector Current vs. Case Temperature
Fig. 6 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Transfer Characteristics
V
FM
(V)
I
FM
(A)
1
10
100
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
I
F
-
Continuous
Forward Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
0 102030405060708090100
V
CE
(V)
I
C
(A)
0
5
10
15
20
25
30
0.6 1.2 1.8 2.4 3 3.6 4.2 4.8 5.4
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
CE
(V)
I
C
(A)
0
5
10
15
20
25
30
0.6 1.2 1.8 2.4 3 3.6 4.2 4.8 5.4
V
GE
= 15 V
V
GE
= 12 V
V
GE
= 9 V
V
GE
= 18 V
I
C
-
Continuous Collector Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25
DC
V
GE
(V)
I
C
(A)
0
5
10
15
20
25
30
567891011121314
T
J
= 125 °C
T
J
= 25 °C
V
CE
= 20 V
VS-ETL015Y120H
www.vishay.com
Vishay Semiconductors
Revision: 16-Jun-16
6
Document Number: 94858
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. I
C
(with D5 - D6 Clamping Diode)
T
J
= 125 °C, V
CC
= 300 V, R
g
= 4.7 :, V
GE
= 15 V, L = 500 μH
Fig. 8 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Zero Gate Voltage Collector Current
Fig. 9 - Typical PFC IGBT Energy Loss vs. I
C
(with Freewheeling Clamping Diode)
T
J
= 125 °C, V
CC
= 600 V, R
g
= 4.7 :, V
GE
= 15 V, L = 500 μH
Fig. 10 - Typical PFC IGBT Switching Time vs. I
C
(with Freewheeling Clamping Diode)
T
J
= 125 °C, V
CC
= 600 V, R
g
= 4.7 :, V
GE
= 15 V, L = 500 μH
Fig. 11 - Typical PFC IGBT Energy Loss vs. R
g
(with Freewheeling Clamping Diode)
T
J
= 125 °C, V
CC
= 600 V, I
C
= 15 A, V
GE
= 15 V, L = 500 μH
Fig. 12 - Typical PFC IGBT Switching Time vs. R
g
(with Freewheeling Clamping Diode)
T
J
= 125 °C, V
CC
= 600 V, I
C
= 15 A, V
GE
= 15 V, L = 500 μH
V
GEth
(V)
I
C
(A)
3
3.5
4
4.5
5
5.5
6
6.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
J
= 25 °C
T
J
= 125 °C
V
CES
(V)
I
CES
(mA)
0.00001
0.0001
0.001
0.01
0.1
1
10
100 200 300 400 500 600 700 800 900 1000 1100 1200
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
I
C
(A)
Energy (mJ)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 5 10 15 20 25 30
E
on
E
off
0 5 10 15 20 25 30
Switching Time (ns)
I
C
(A)
1
10
100
1000
t
don
t
doff
t
r
t
f
10
100
1000
0 5 10 15 20 25 30 35 40 45 50
Switching Time (ns)
t
don
t
doff
t
r
t
f
R
g
(Ω)
P1-P3P4-P6P7-P9P10-P12P13-P13

VS-ETL015Y120H

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Buy VS-ETL015Y120H
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 15A Dbl Interleaved Boost Converter
Lifecycle:
New from this manufacturer.
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