Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 11: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 12: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.283 1.35 1.45 V
1.425 1.5 1.575 V 1
I
VTT
Termination reference current from V
TT
–600 600 mA
V
TT
Termination reference voltage (DC) – com-
mand/address bus
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V 2
I
I
Input leakage current;
Any input 0V V
IN
V
DD
;
V
REF
input 0V V
IN
0.95V
(All other pins not under
test = 0V)
Address inputs,
RAS#, CAS#,
WE#, BA
–32 0 32 µA
S#, CKE, ODT,
CK, CK#
–16 0 16
DM –4 0 4
I
OZ
Output leakage current;
0V V
OUT
V
DD
;
DQ and ODT are
disabled; ODT is HIGH
DQ, DQS, DQS# –10 0 10 µA
I
VREF
V
REF
supply leakage current;
V
REFDQ
= V
DD
/2 or V
REFCA
= V
DD
/2
(All other pins not under test = 0V)
–16 0 16 µA
T
A
Module ambient
operating temperature
Commercial 0 70 °C 3, 4
T
C
DDR3 SDRAM component
case operating temperature
Commercial 0 95 °C 3, 4, 5
Notes:
1. Module is backward-compatible with 1.5V operation. Refer to device specification for
details and operation guidance.
2. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
3. T
A
and T
C
are simultaneous requirements.
4. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on Micron’s web site.
5. The refresh rate is required to double when 85°C < T
C
95°C.
4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
Electrical Specifications
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ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 13: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
DRAM Operating Conditions
PDF: 09005aef846206a0
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 14: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision K)
Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 2Gb (256 Meg x
8) component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
408 400 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
512 496 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
224 224 mA
Precharge quiet standby current I
DD2Q
2
320 320 mA
Precharge standby current I
DD2N
2
336 336 mA
Precharge standby ODT current I
DD2NT
1
344 328 mA
Active power-down current I
DD3P
2
336 336 mA
Active standby current I
DD3N
2
512 480 mA
Burst read operating current I
DD4R
1
848 752 mA
Burst write operating current I
DD4W
1
872 776 mA
Refresh current I
DD5B
1
1536 1528 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
192 192 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
240 240 mA
All banks interleaved read current I
DD7
1
1344 1296 mA
Reset current I
DD8
2
224 224 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
I
DD
Specifications
PDF: 09005aef846206a0
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.

MT16KTF1G64HZ-1G9P1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR3 8GB SODIMM
Lifecycle:
New from this manufacturer.
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