Table 15: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revisions E)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 4Gb (512 Meg x
8) component data sheet
Parameter Symbol 1866 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
640 584 520 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
704 672 640 mA
Precharge power-down current: Slow exit I
DD2P0
2
288 288 288 mA
Precharge power-down current: Fast exit I
DD2P1
2
592 512 448 mA
Precharge quiet standby current I
DD2Q
2
560 512 448 mA
Precharge standby current I
DD2N
2
560 512 464 mA
Precharge standby ODT current I
DD2NT
1
480 456 424 mA
Active power-down current I
DD3P
2
656 608 560 mA
Active standby current I
DD3N
2
656 608 560 mA
Burst read operating current I
DD4R
1
1536 1400 1264 mA
Burst write operating current I
DD4W
1
1272 1144 1024 mA
Refresh current I
DD5B
1
2080 2024 1968 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
320 320 320 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
400 400 400 mA
All banks interleaved read current I
DD7
1
2152 1904 1664 mA
Reset current I
DD8
2
320 320 320 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
I
DD
Specifications
PDF: 09005aef846206a0
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN
16
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© 2011 Micron Technology, Inc. All rights reserved.
