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BT131-600/DG,412

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT131-600
4Q Triac
4 October 2016 Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended for
interfacing with low power drivers including microcontrollers.
2. Features and benefits
• Direct interfacing to logic level ICs
• Direct interfacing to low power gate drive circuits and microcontrollers
• High blocking voltage capability
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants
• Very sensitive gate
3. Applications
• Air conditioner indoor fan control
• General purpose motor control
• General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
T(RMS)
RMS on-state current full sine wave; T
lead
≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
- - 1 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 12.5 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 13.7 A
T
j
junction temperature - - 125 °C
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 0.4 3 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 1.3 3 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 1.4 3 mA
WeEn Semiconductors
BT131-600
4Q Triac
BT131-600 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 4 October 2016 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 3.8 7 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 1.3 5 mA
V
T
on-state voltage I
T
= 1.4 A; T
j
= 25 °C; Fig. 10 - 1.2 1 V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
=
67% of V
DRM
); exponential waveform;
R
GT1(ext)
= 1 kΩ; Fig. 12
10 20 - V/µs
dV
com
/dt rate of change of
commutating voltage
V
D
= 400 V; T
j
= 125 °C; dI
com
/
dt = 0.5 A/ms; I
T
= 1 A; gate open
circuit
2 - - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
123
TO-92 (SOT54)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT131-600 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
P1-P3P4-P6P7-P9P10-P12P13-P14

BT131-600/DG,412

Mfr. #:
Buy BT131-600/DG,412
Manufacturer:
WeEn Semiconductors
Description:
Triacs 4Q TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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