WeEn Semiconductors
BT131-600
4Q Triac
BT131-600 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 4 October 2016 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 600 V
I
T(RMS)
RMS on-state current full sine wave; T
lead
≤ 51 °C; Fig. 1; Fig. 2;
Fig. 3
- 1 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 12.5 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 13.7 A
I
2
t I
2
t for fusing t
p
= 10 ms; sine-wave pulse - 0.78 A²s
- 50 A/µsI
G
= 6 mA
- 50 A/µs
I
G
= 14 mA - 10 A/µs
dI
T
/dt rate of rise of on-state
current
I
G
= 6 mA - 50 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
003aab039
0
0.4
0.8
1.2
- 50 0 50 100 150
T
lead
(°C)
I
T(RMS)
(A)
51.2 °C
T
lead
= 51.2 °C
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
003aab042
1
2
3
I
T(RMS)
(A)
0
surge duration (s)
10
- 2
10110
- 1
f = 50 Hz; T
lead
= 51.2 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
