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BT131-600/DG,412

P1-P3P4-P6P7-P9P10-P12P13-P14
WeEn Semiconductors
BT131-600
4Q Triac
BT131-600 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 4 October 2016 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle; Fig. 6 - - 60 K/WR
th(j-lead)
thermal resistance
from junction to lead
half cycle; Fig. 6 - - 80 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
printed circuit board mounted: lead
length = 4 mm
- 150 - K/W
003aab045
1
10
- 1
10
10
2
Z
th(j-lead)
(K/W)
10
- 2
t
p
(s)
10
- 5
1 1010
- 1
10
- 2
10
- 4
10
- 3
t
p
P
t
(1)
(2)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width
WeEn Semiconductors
BT131-600
4Q Triac
BT131-600 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 4 October 2016 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 0.4 3 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 1.3 3 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 1.4 3 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 3.8 7 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- 1.2 5 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- 4 8 mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- 1 5 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 8
- 2.5 8 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 1.3 5 mA
V
T
on-state voltage I
T
= 1.4 A; T
j
= 25 °C; Fig. 10 - 1.2 1 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.2 0.3 - V
I
D
off-state current V
D
= 600 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
=
67% of V
DRM
); exponential waveform;
R
GT1(ext)
= 1 kΩ; Fig. 12
10 20 - V/µs
dV
com
/dt rate of change of
commutating voltage
V
D
= 400 V; T
j
= 125 °C; dI
com
/
dt = 0.5 A/ms; I
T
= 1 A; gate open
circuit
2 - - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 1.5 A; V
D
= 600 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs
- 2 - µs
WeEn Semiconductors
BT131-600
4Q Triac
BT131-600 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 4 October 2016 8 / 13
T
j
(°C)
-50 1501000 50
003aab044
1
2
3
0
I
GT(Tj)
I
GT(25°C)
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
001aab100
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
001aab099
1
2
3
0
I
H
I
H(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
V
T
(V)
0 21.60.8 1.20.4
003aab037
0.8
1.2
0.4
1.6
2
I
T
(A)
0
(1)
(2)
(3)
V
o
= 0.92 V; R
s
= 0.4 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
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BT131-600/DG,412

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Buy BT131-600/DG,412
Manufacturer:
WeEn Semiconductors
Description:
Triacs 4Q TRIAC
Lifecycle:
New from this manufacturer.
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