NCD5703A, NCD5703B, NCD5703C
www.onsemi.com
13
Applications and Operating Information
This section lists the details about key features and
operating guidelines for the NCD5703.
High Drive Current Capability
The NCD5703 driver family is equipped with many
features which facilitate a superior performance IGBT
driving circuit. Foremost amongst these features is the high
drive current capability. The drive current of an IGBT driver
is a function of the differential voltage on the output pin
(V
CC
−VOH/VO for source current, VOL/VO−V
EE
for sink
current) as shown in Figure 19. Figure 19 also indicates that
for a given VOH/VOL value, the drive current can be
increased by using higher V
CC
/V
EE
power supply). The
drive current tends to drop off as the output voltage goes up
(for turn−on event) or goes down (for turn−off event). As
explained in many IGBT application notes, the most critical
phase of IGBT switching event is the Miller plateau region
where the gate voltage remains constant at a voltage
(typically in 9−11 V range depending on IGBT design and
the collector current), but the gate drive current is used to
charge/discharge the Miller capacitance (C
GC
). By
providing a high drive current in this region, a gate driver can
significantly reduce the duration of the phase and help
reducing the switching losses. The NCD5703 addresses this
requirement by providing and specifying a high drive
current in the Miller plateau region. Most other gate driver
ICs merely specify peak current at the start of switching –
which may be a high number, but not very relevant to the
application requirement. It must be remembered that other
considerations such as EMI, diode reverse recovery
performance, etc., may lead to a system level decision to
trade off the faster switching speed against low EMI and
reverse recovery. However, the use of NCD5703 does not
preclude this trade−off as the user can always tune the drive
current by employing external series gate resistor. Important
thing to remember is that by providing a high internal drive
current capability, the NCD5703 facilitates a wide range of
gate resistors. Another value of the high current at the Miller
plateau is that the initial switching transition phase is shorter
and more controlled. Finally, the high gate driver current
(which is facilitated by low impedance internal FETs),
ensures that even at high switching frequencies, the power
dissipation from the drive circuit is primarily in the external
series resistor and more easily manageable. Experimental
results have shown that the high current drive results in
reduced turn−on energy (E
ON
) for the IGBT switching.
Figure 19. Output Current vs. Output Voltage Drop
When driving larger IGBTs for higher current
applications, the drive current requirement is higher, hence
lower R
G
is used. Larger IGBTs typically have high input
capacitance. On the other hand, if the NCD5703 is used to
drive smaller IGBT (lower input capacitance), the drive
current requirement is lower and a higher R
G
is used. Thus,
for most typical applications, the driver load RC time
constant remains fairly constant. Caution must be exercised
when using the NCD5703 with a very low load RC time
constant. Such a load may trigger internal protection
circuitry within the driver and disable the device. Figure 20
shows the recommended minimum gate resistance as a
function of IGBT gate capacitance and gate drive trace
inductance.
Figure 20. Recommended Minimum Gate Resistance
as a Function of IGBT Gate Capacitance
NCD5703A, NCD5703B, NCD5703C
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14
Gate Voltage Range
The negative drive voltage for gate (with respect to GND,
or Emitter of the IGBT) is a robust way to ensure that the gate
voltage does not rise above the threshold voltage due to the
Miller effect. In systems where the negative power supply is
available, the VEE option offered by NCD5703B allows not
only a robust operation, but also a higher drive current for
turn−off transition. Adequate bypassing between VEE pin
and GND pin is essential if this option is used.
The V
CC
range for the NCD5703 is quite wide and allows
the user the flexibility to optimize the performance or use
available power supplies for convenience.
Under Voltage Lock Out (UVLO)
This feature ensures reliable switching of the IGBT
connected to the driver output. At the start of the drivers
operation when V
CC
is applied to the driver, the output
remains turned−off. This is regardless of the signals on V
IN
until the V
CC
reaches the UVLO Output Enabled
(V
UVLO−OUT−ON
) level. After the V
CC
rises above the
V
UVLO−OUT−ON
level, the driver is in normal operation. The
state of the output is controlled by signal at V
IN
.
If the V
CC
falls below the UVLO Output Disabled
(V
UVLO−OUT−OFF
) level during the normal operation of the
driver, the Fault output is activated and the output is shut−down
(after a delay) and remains in this state. The driver output
does not start to react to the input signal on V
IN
until the V
CC
rises above the V
UVLO−OUT−ON
again. The waveform
showing the UVLO behavior of the driver is in Figure 21.
In an IGBT drive circuit, the drive voltage level is
important for drive circuit optimization. If V
UVLO−OUT−OFF
is too low, it will lead to IGBT being driven with insufficient
gate voltage. A quick review of IGBT characteristics can
reveal that driving IGBT with low voltage (in 10−12 V
range) can lead to a significant increase in conduction loss.
So, it is prudent to guarantee V
UVLO−OUT−OFF
at a
reasonable level (above 12 V), so that the IGBT is not forced
to operate at a non−optimum gate voltage. On the other hand,
having a very high drive voltage ends up increasing
switching losses without much corresponding reduction in
conduction loss. So, the V
UVLO−OUT−ON
value should not
be too high (generally, well below 15 V). These conditions
lead to a tight band for UVLO enable and disable voltages,
while guaranteeing a minimum hysteresis between the two
values to prevent hiccup mode operation. The NCD5703
meets these tight requirements and ensures smooth IGBT
operation. It ensures that a 15 V supply with ±8% tolerance
will work without degrading IGBT performance, and
guarantees that a fault will be reported and the IGBT will be
turned off when the supply voltage drops below 12.2 V.
A UVLO event (V
CC
voltage going below V
UVLO−OUT−OFF
)
also triggers activation of FLT
output after a delay of t
d3−FLT
.
This indicates to the controller that the driver has
encountered an issue and corrective action needs to be taken.
However, a nominal delay t
d1−OUT
= 12 ms is introduced
between the initiation of the FLT
output and actual turning
off of the output. This delay provides adequate time for the
controller to initiate a more orderly/sequenced shutdown. In
case the controller fails to do so, the driver output shutdown
ensures IGBT protection after t
d1−OUT
.
Figure 21. UVLO Function and Limits
Timing Delays and Impact on System Performance
The gate driver is ideally required to transmit the input
signal pulse to its output without any delay or distortion. In
the context of a high−power system where IGBTs are
typically used, relatively low switching frequency (in tens of
kHz) means that the delay through the driver itself may not
be as significant, but the matching of the delay between
different drivers in the same system as well as between
different edges has significant importance. With reference to
Figure 22(a), two input waveforms are shown. They are
typical complementary inputs for high−side (HS) and
low−side (LS) of a half−bridge switching configuration. The
dead−time between the two inputs ensures safe transition
between the two switches. However, once these inputs are
through the driver, there is potential for the actual gate
voltages for HS and LS to be quite different from the
intended input waveforms as shown in Figure 22(a). The end
result could be a loss of the intended dead−time and/or
pulse−width distortion. The pulse−width distortion can
create an imbalance that needs to be corrected, while the loss
of dead−time can eventually lead to cross−conduction of the
switches and additional power losses or damage to the
system.
The NCD5703 driver is designed to address these timing
challenges by providing a very low pulse−width distortion
and excellent delay matching. As an example, the delay
matching is guaranteed to t
DISTORT2
= ±25 ns while many
of competing driver solutions can be >250 ns.
NCD5703A, NCD5703B, NCD5703C
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15
Figure 22(a). Timing Waveforms (Other Drivers) Figure 22(b). NCD5703 Timing Waveforms
Active Miller Clamp Protection
This feature (offered by NCD5703A) is a cost savvy
alternative to a negative gate voltage. The main requirement
is to hold the gate of the turned−off (for example low−side)
IGBT below the threshold voltage during the turn−on of the
opposite−side (in this example high−side) IGBT in the half
bridge. The turn−on of the high−side IGBT causes high dv/dt
transition on the collector of the turned−off low−side IGBT.
This high dv/dt then induces current (Miller current) through
the C
GC
capacitance (Miller capacitance) to the gate
capacitance of the low−side IGBT as shown in Figure 23. If
the path from gate to GND has critical impedance (caused
by R
G
) the Miller current could rise the gate voltage above
the threshold level. As a consequence the low−side IGBT
could be turned on for a few tens or hundreds of
nanoseconds. This causes higher switching losses. One way
to avoid this situation is to use negative gate voltage, but this
requires second DC source for the negative gate voltage.
An alternative way is to provide an additional path from
gate to GND with very low impedance. This is exactly what
Active Miller Clamp protection does. Additional trace from
the gate of the IGBT to the Clamp pin of the gate driver is
introduced. After the V
O
output has gone below the Active
Miler Clamp threshold V
MC−THR
the Clamp pin is shorted
to GND and thus prevents the voltage on the gate of the
IGBT to rise above the threshold voltage as shown in
Figure 24. The Clamp pin is disconnected from GND as
soon as the signal to turn on the IGBT arrives to the gate
driver input. The fact that the Clamp pin is engaged only
after the gate voltage drops below the V
MC−THR
threshold
ensures that the function of this pin does not interfere with
the normal turn−off switching performance that is user
controllable by choice of R
G
.

NCD5703ADR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers IGBT Gate Drivers High-Cur Stand-Alone
Lifecycle:
New from this manufacturer.
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