OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NCD5703ADR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
NCD5703A, NCD5703B, NCD5703C
www.onsemi.com
7
Table 2. ABSOLUTE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Minimum Maximum Unit
Differential Power Supply V
CC
−V
EE
(V
max
) 0 36 V
Positive Power Supply V
CC
−GND −0.3 22 V
Negative Power Supply V
EE
−GND −18 0.3 V
Gate Output High (V
O
, V
OH
)−GND V
CC
+ 0.3 V
Gate Output Low (V
O
, V
OL
)−GND V
EE
− 0.3 V
Input Voltage V
IN
−GND −0.3 5.5 V
DESAT Voltage V
DESAT
−GND −0.3 V
CC
+ 0.3 V
FLT current
Sink
I
FLT−SINK
20
mA
Power Dissipation
SO−8 package
PD 700 mW
Maximum Junction Temperature T
J(max)
150 °C
Storage Temperature Range TSTG −65 to 150 °C
ESD Capability, Human Body Model (Note 2) ESDHBM 4 kV
ESD Capability, Machine Model (Note 2) ESDMM 200 V
Moisture Sensitivity Level MSL 1 −
Lead Temperature Soldering
Reflow (SMD Styles Only), Pb−Free Versions (Note 3)
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating: ≤100 mA per JEDEC standard: JESD78, 25°C
3. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Table 3. THERMAL CHARACTERISTICS
Parameter Symbol Value Unit
Thermal Characteristics, SOIC−8 (Note 4)
Thermal Resistance, Junction−to−Air (Note 5)
R
q
JA
176
°C/W
4. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
5. Values based on copper area of 100 mm
2
(or 0.16 in
2
) of 1 oz copper thickness and FR4 PCB substrate.
Table 4. OPERATING RANGES (Note 6)
Parameter
Symbol Min Max Unit
Differential Power Supply V
CC
−V
EE
(V
max
) 30 V
Positive Power Supply V
CC
UVLO 20 V
Negative Power Supply V
EE
−15 0 V
Input Voltage V
IN
0 5 V
Input pulse width t
on
40 ns
Ambient Temperature T
A
−40 125 °C
6. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NCD5703A, NCD5703B, NCD5703C
www.onsemi.com
8
Table 5. ELECTRICAL CHARACTERISTICS V
CC
= 15 V, V
EE
= 0 V, Kelvin GND connected to V
EE
. For typical values T
A
= 25°C,
for min/max values, T
A
is the operating ambient temperature range that applies, unless otherwise noted.
Parameter
Test Conditions Symbol Min Typ Max Unit
LOGIC INPUT and OUTPUT
Input Threshold Voltages
High−state (Logic 1) Required
Low−state (Logic 0) Required
No state change
Pulse−Width = 150 ns, V
EN
= 5 V
Voltage applied to get output to go high
Voltage applied to get output to go low
Voltage applied without change in output state
V
IN−H1
V
IN−L1
V
IN−NC
4.3
1.2
0.75
3.7
V
Input Current
High−state
Low−state
V
IN−H
= 4.5 V
V
IN−L
= 0.5 V
I
IN−H
I
IN−L
10
1
mA
Input Pulse−Width
No Response at the Output
Guaranteed Response at the
Output
Voltage thresholds consistent with input
specs
t
on−min1
t
on−min2
35
15
ns
FLT Threshold Voltage
Low State
High State
(I
FLT−SINK
= 15 mA)
External pull−up
V
FLT−L
V
FLT−H
0.5 1.0
V
CC
+0.3
V
DRIVE OUTPUT
Output Low State
I
sink
= 200 mA, T
A
= 25°C
I
sink
= 200 mA, T
A
= −40°C to 125°C
I
sink
= 1.0 A, T
A
= 25°C
V
OL1
V
OL2
V
OL3
0.1
0.2
0.8
0.2
0.5
1.2
V
Output High State
I
src
= 200 mA, T
A
= 25°C
I
src
= 200 mA, T
A
= −40°C to 125°C
I
src
= 1.0 A, T
A
= 25°C
V
OH1
V
OH2
V
OH3
14.5
14.2
13.8
14.8
14.7
14.1
V
Peak Driver Current, Sink
(Note 7)
R
G
= 0.1 W, V
CC
= 15 V, V
EE
= −8 V
V
O
= 13 V
V
O
= 9 V (near Miller Plateau)
I
PK−snk1
I
PK−snk2
6.8
6.1
A
Peak Driver Current, Source
(Note 7)
R
G
= 0.1 W, V
CC
= 15 V, V
EE
= −8 V
V
O
= −5 V
V
O
= 9 V (near Miller Plateau)
I
PK−src1
I
PK−src2
7.8
4.0
A
DYNAMIC CHARACTERISTICS
Turn−on Delay
(see timing diagram)
Negative input pulse width = 10 ms
t
pd−on
45 59 75 ns
Turn−off Delay
(see timing diagram)
Positive input pulse width = 10 ms
t
pd−off
45 54 75 ns
Propagation Delay Distortion
(=t
pd−on
− t
pd−off
)
For input or output pulse width > 150 ns,
T
A
= 25°C
T
A
= −40°C to 125°C
t
distort1
t
distort2
−5
−25
5 15
25
ns
Prop Delay Distortion between
Parts (Note 7)
t
distort
−tot
−30 0 30 ns
Rise Time (Note 7)
(see timing diagram)
C
load
= 1.0 nF t
rise
9.2 ns
Fall Time (Note 7)
(see timing diagram)
C
load
= 1.0 nF t
fall
7.9 ns
Delay from FLT under UVLO/
TSD to VO/VOL
t
d1−OUT
10 12 15
ms
Delay from DESAT to VO/VOL
(Note 7)
t
d2−OUT
220 ns
7. Values based on design and/or characterization.
NCD5703A, NCD5703B, NCD5703C
www.onsemi.com
9
Table 5. ELECTRICAL CHARACTERISTICS V
CC
= 15 V, V
EE
= 0 V, Kelvin GND connected to V
EE
. For typical values T
A
= 25°C,
for min/max values, T
A
is the operating ambient temperature range that applies, unless otherwise noted.
Parameter UnitMaxTypMinSymbolTest Conditions
DYNAMIC CHARACTERISTICS
Delay from UVLO/TSD to FLT
(Note 7)
t
d3−FLT
7.3
ms
MILLER CLAMP (NCD5703A ONLY)
Clamp Voltage
I
sink
= 500 mA, T
A
= 25°C
I
sink
= 500 mA, T
A
= −40°C to 125°C
V
clamp
1.2 1.4
2.2
V
Clamp Activation Threshold V
MC−THR
1.8 2.0 2.2 V
DESAT PROTECTION
DESAT Threshold Voltage
V
DESAT−THR
6.0 6.35 7.0 V
Blanking Charge Current I
DESAT−CHG
0.20 0.24 0.28 mA
Blanking Discharge Current I
DESAT−DIS
30 mA
UVLO
UVLO Startup Voltage
V
UVLO−OUT−ON
13.2 13.5 13.8 V
UVLO Disable Voltage V
UVLO−OUT−OFF
12.2 12.5 12.8 V
UVLO Hysteresis V
UVLO−HYST
1.0 V
VREF
Voltage Reference
I
REF
= 10 mA V
REF
4.85 5.00 5.15 V
Reference Output Current
(Note 7)
I
REF
20 mA
Recommended Capacitance C
VREF
100 nF
SUPPLY CURRENT
Current Drawn from V
CC
V
CC
= 15 V
Standby (No load on output, FLT
, VREF)
I
CC−SB
0.9 1.5 mA
Current Drawn from V
EE
(NCD5703B ONLY)
V
EE
= −10 V
Standby (No load on output, FLT
, VREF)
I
EE−SB
−0.2 −0.14 mA
THERMAL SHUTDOWN
Thermal Shutdown Temperature
(Note 7)
T
SD
188 °C
Thermal Shutdown Hysteresis
(Note 7)
T
SH
33 °C
7. Values based on design and/or characterization.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Package Shipping
†
NCD5703ADR2G SOIC−8
(Pb−Free)
2500 / Tape & Reel
NCD5703BDR2G SOIC−8
(Pb−Free)
2500 / Tape & Reel
NCD5703CDR2G SOIC−8
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

NCD5703ADR2G

Mfr. #:
Buy NCD5703ADR2G
Manufacturer:
ON Semiconductor
Description:
Gate Drivers IGBT Gate Drivers High-Cur Stand-Alone
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet