CM1235
http://onsemi.com
5
Specifications
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Operating Temperature Range −40 to +85 °C
Storage Temperature Range −65 to +150 °C
Breakdown Voltage (Positive) 6 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. ELECTRICAL OPERATING CHARACTERISTICS
(All parameters specified at T
A
= –40°C to +85°C unless otherwise noted.)
Symbol
Parameter Conditions Min Typ Max Units
V
IN
I/O Voltage Relative to GND −0.5 5.5 V
I
IN
Continuous Current through signal pins
(IN to OUT) 1000 Hr
100 mA
I
F
Channel Leakage Current T
A
= 25°C; V
IN
= 5 V ±0.1 ±1.0
mA
V
ESD
ESD Protection − Peak Discharge Voltage
at any channel input, in system:
Contact discharge per
IEC 61000−4−2 Standard
T
A
= 25°C ±8 kV
I
RES
Residual ESD Peak Current on RDUP
(Resistance of Device Under Protection)
IEC 61000−4−2 8 kV;
RDUP = 5 W, T
A
= 25°C;
See Figure 7
3.0 A
V
CL
Channel Clamp Voltage
(Channel clamp voltage per
IEC 61000−4−5 Standard)
Positive Transients
Negative Transients
I
PP
= 1 A, T
A
= 25°C,
t
P
= 8/20 mS
+9.2
−1.6
V
R
DYN
Dynamic Resistance
Positive Transients
Negative Transients
I
PP
= 1 A, T
A
= 25°C,
t
P
= 8/20 mS
0.6
0.5
W
Z
TDR
Differential Impedance
TDR excursion from 100 W
characteristic impedance transmis-
sion line;
TR = 200 ps; (Note 1)
87 103
W
Zo Differential Channels pair
characteristic impedance
T
R
= 200 ps; (Note 1)
100
W
DZo
Channel−to−Channel Impedance Match
(Differential)
T
R
= 200 ps; T
A
= 25°C;
(Note
1)
2 %
1. Impedance values for deviation from continuous 100 W uncompensated differential microstrip, with typical layout as measured. See Figure 7.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
