This is information on a product in full production.
July 2014 DocID025028 Rev 3 1/13
STL4P2UH7
P-channel 20 V, 0.087 Ω typ., 4 A STripFET™ VII DeepGATE™
Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
Ultra logic level
Extremely low on-resistance R
DS(on)
High avalanche ruggedness
Low gate drive power losses
Applications
Switching applications
Description
This device exhibits low on-state resistance and
capacitance for improved conduction and
switching performance.
Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
1(D)
2(D) 3(G)
6(D)
5(D) 4(S)
D
S
AM11269v1
PowerFLAT™ 2x2
1
2
3
6
5
4
1
2
3
Order code V
DS
R
DS(on)
max I
D
STL4P2UH7 20 V 0.1 Ω @ 4.5 V 4 A
Table 1. Device summary
Order code Marking Package Packaging
STL4P2UH7 4L2U PowerFLAT™ 2x2 Tape and reel
www.st.com
Contents STL4P2UH7
2/13 DocID025028 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DocID025028 Rev 3 3/13
STL4P2UH7 Electrical ratings
13
1 Electrical ratings
Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 20 V
V
GS
Gate-source voltage ± 8 V
I
D
(1)
1. The value is rated according to R
thj-pcb
Drain current (continuous) at T
pcb
= 25 °C 4 A
I
D
(1)
Drain current (continuous) at T
pcb
= 100 °C 2.5 A
I
DM
(1)(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 16 A
P
TOT
(1)
Total dissipation at T
pcb
= 25 °C 2.4 W
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-pcb
(1)
1. When mounted on 1inch
2
FR-4 board, 2 oz Cu.
Thermal resistance junction-pcb max, single
operation
52 °C/W

STL4P2UH7

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET P-channel 20 V, 0.087 Ohm typ., 4 A STripFET H7 Power MOSFET in a PowerFLAT 2x2 package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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