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STL4P2UH7
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
DocID025028 Rev 3
7/13
STL4P2UH
7
Electri
cal character
istics
13
Figure 8. Cap
acita
nce variations
Figure 9. Normalize
d gate threshold volt
age vs
temperature
Figure 10. No
rmalized
on-resistance vs
temperature
Figure 1
1. Nor
malized V
(BR)DSS
vs temperature
Figure 12. Source
-drain diode forward
charact
eristics
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Test circu
its
STL4P2UH7
8/13
Doc
ID02502
8 Rev 3
3
T
est circuits
Figure 13. S
witchin
g times te
st circuit f
or
resist
ive load
Figure 1
4. Gate
charge
test circu
it
Figur
e 15. T
est circu
it for
inductive lo
ad
switching and diode recovery times
DocID025028 Rev 3
9/13
STL4P2UH
7
Package me
chanic
al data
13
4
Package mechan
ical dat
a
In orde
r to meet e
nvironm
ental requi
rements, ST offers th
ese de
vices
in different gr
ades of
ECOP
ACK
®
packages
, dependi
ng on th
eir level
of env
ironmental com
pliance
. ECOP
ACK
®
speci
fication
s, grade
definitio
ns and pr
oduct
status are a
vailable a
t:
www
.s
t.com
.
ECOP
ACK
®
is an
ST tra
demark.
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
STL4P2UH7
Mfr. #:
Buy STL4P2UH7
Manufacturer:
STMicroelectronics
Description:
MOSFET P-channel 20 V, 0.087 Ohm typ., 4 A STripFET H7 Power MOSFET in a PowerFLAT 2x2 package
Lifecycle:
New from this manufacturer.
Delivery:
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STL4P2UH7