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STL4P2UH7

P1-P3P4-P6P7-P9P10-P12P13-P13
Electrical characteristics STL4P2UH7
4/13 DocID025028 Rev 3
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
V
GS
= 0, I
D
= 250 µA 20 V
I
DSS
Zero gate voltage
drain current
V
GS
= 0, V
DS
= 20 V 1 µA
I
GSS
Gate-body leakage
current
V
DS
= 0, V
GS
= ± 8 V 10 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 0.4 1 V
R
DS(on)
Static drain-source
on- resistance
V
GS
= 4.5 V, I
D
= 2 A 0.087 0.1 Ω
V
GS
= 2.5 V, I
D
= 2 A 0.11 0.13 Ω
V
GS
= 1.8 V, I
D
= 2 A 0.145 0.18 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
GS
= 0, V
DS
= 10 V, f = 1 MHz
- 510 - pF
C
oss
Output capacitance - 66 - pF
C
rss
Reverse transfer
capacitance
-44-pF
Q
g
Total gate charge
V
DD
= 10 V, I
D
= 3 A,
V
GS
= 4.5 V
(see Figure 14)
-4.8-nC
Q
gs
Gate-source charge - 0.7 - nC
Q
gd
Gate-drain charge - 0.8 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
t
d(on)
Turn-on delay time
V
DD
= 10 V, I
D
= 1.5 A,
R
G
= 4.7 Ω, V
GS
= 4.5 V
(see Figure 15)
-9-ns
t
r
Rise time - 21 - ns
t
d(off)
Turn-off delay time - 40 - ns
t
f
Fall time - 19 - ns
DocID025028 Rev 3 5/13
STL4P2UH7 Electrical characteristics
13
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 4 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 16 A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 1 A, V
GS
= 0 - 1 V
t
rr
Reverse recovery time
V
DD
= 16 V
di/dt = 100 A/µs, I
SD
= 1 A
T
j
=150 °C (see Figure 15)
-12.8 ns
Q
rr
Reverse recovery charge - 5 nC
I
RRM
Reverse recovery current - 0.8 A
Electrical characteristics STL4P2UH7
6/13 DocID025028 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
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P1-P3P4-P6P7-P9P10-P12P13-P13

STL4P2UH7

Mfr. #:
Buy STL4P2UH7
Manufacturer:
STMicroelectronics
Description:
MOSFET P-channel 20 V, 0.087 Ohm typ., 4 A STripFET H7 Power MOSFET in a PowerFLAT 2x2 package
Lifecycle:
New from this manufacturer.
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