NCP51705
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7
ELECTRICAL CHARACTERISTICS (V
DD
=20 V, V
EESET
= 0 V and C
LOAD
= 1000 pF for typical values T
A
=25°C, for min/max values
T
J
=T
A
=40°C to +125°C, unless otherwise specified.) (Notes 7, 8)
Symbol
Parameters Test Conditions Min. Typ. Max. Units
VDD Section
I
DD
Operating V
DD
Supply Current f
IN
= 100 kHz, VEESET = 5 V 12 18 mA
I
QDD1
Quiescent V
DD
Supply Current 1 V
IN+
= V
IN
= 0 V, VEESET = 5 V 4.5 6.5 mA
I
QDD2
Quiescent V
DD
Supply Current 2 V
IN+
= 0 V, V
IN
= 5 V 0.85 1 mA
I
UVSET
Source Current for UV Voltage Set V
UVSET
= 3 V 22 25 28
mA
V
DDUV+
V
DD
Supply UnderVoltage
Positivegoing Threshold Voltage
V
UVSET
= 3 V 17 18 19 V
V
DDUV
V
DD
Supply UnderVoltage
Negativegoing Threshold Voltage
V
UVSET
= 3 V 16 17 18 V
V
DDHYS
V
DD
Supply UVLO Hysteresis Voltage V
DDUV+
V
DDUV
1 V
V
UVSET,MIN
UVSET pin short protection Threshold Voltage V
UVSET
rising 1.55 V
V
UVSET,HYS
UVSET pin short protection Hysteresis 0.2 V
5V Regulator Section
V
V5V
5 V Bias (Note 9)
T
A
= 25°C 4.9 5 5.1 V
Total Variation 4.75 5 5.25 V
V
V5V_Reg
5 V Line Regulation 10 V < V
DD
< 22 V, I
OUT
= 10 mA 50 mV
5 V Load Regulation 0.1 mA < I
OUT
< 10 mA 50 mV
I
5V_MAX
Maximum Output Current (Note 10) for external load 20 25 mA
VEE Regulator Section
I
VEESET
Input V
EESET
Bias Current 5
mA
V
VCH,MAX
Maximum V
CH
Output Voltage (Note 10) 10 V
Charge Pump Section
V
EE
Negative Bias Rail Voltage
V
EESET
= 5 V 5.5 5
4.5
V
V
EESET
= open 3.8 3.4 3.0 V
V
EESET
= V
DD
8 V
I
VEE,
MAX
Maximum Output Current of V
EE
C
FYL
= 0.47 mF, C
VEE
= 1.5 mF
C
LOAD
= 8.5 nF, VEESET = 5 V
50 mA
f
OSC
Oscillator Switching Frequency for Charge Pump 350 390 430 kHz
Desaturation Section
I
DESAT
DC Source Current V
DESAT
= 0 V 360 400 440
mA
V
TH,DESAT
Desaturation Protection Threshold Voltage 7 7.5 8 V
t
DEL,DESAT
Blanking Time after turnon 350 500 650 ns
R
ON,DESAT
Active Pull Down Resistance 5 10
W
Thermal Shutdown Section
TSD
Thermal ShutDown Temperature (Note 10) 130 150 °C
TSD
_HYS
TSD Hysteresis (Note 10) 25 °C
7. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
J
= T
A
= 25_C.
9. Exclude overshoot voltage at startup.
10.This parameter, although guaranteed by design, is not tested in production.
NCP51705
www.onsemi.com
8
ELECTRICAL CHARACTERISTICS (V
DD
=20 V, V
EESET
= 0 V and C
LOAD
= 1000 pF for typical values T
A
=25°C, for min/max values
T
J
=T
A
=40°C to +125°C, unless otherwise specified.) (Notes 7, 8)
Symbol UnitsMax.Typ.Min.Test ConditionsParameters
Input Logic Section; IN+; IN
V
IH
High Level Input Voltage 1.6 2.0 V
V
IL
Low Level Input Voltage 0.8 1.2 V
V
INHYS
Input Logic Hysteresis 0.4 V
I
IN+
High Level Logic Input Bias Current V
IN+
= 5 V 50
mA
I
IN
Low Level Logic Input Bias Current V
IN
= 0 V 50
mA
R
IN+
Logic Input PullDown Resistance 75 100 125
kW
R
IN
Logic Input PullUp Resistance 75 100 125
kW
Output Logic Section; XEN
V
OHX
High Level Output Voltage (V5VV
OH
) I
OUT
= 1 mA 0 0.5 V
V
OLX
Low Level Output Voltage I
OUT
= 1 mA 0 0.2 V
I
XENH
High Level Logic Output Source Current (Note 10) 5 mA
I
XENL
High Level Logic Output Sink Current (Note 10) 5 mA
Gate Driver Output Section
I
SOURCE
OUTSRC Source Current (Note 10) OUTSRC = 0 V, VEESET = 5 V 6 A
I
SINK
OUTSNK Sink Current (Note 10) OUTSNK = 20 V, VEESET = 5 V 6 A
V
OH
High Level Output Voltage (VDDVOUT) I
OUT
= 100 mA 0 0.5 V
V
OL
Low Level Output Voltage I
OUT
= 100 mA 0 0.2 V
t
ON
TurnOn Propagation Delay Time C
LOAD
= 1 nF 25 50 ns
t
OFF
TurnOff Propagation Delay Time C
LOAD
= 1 nF 25 50 ns
t
R
TurnOn Rise Time C
LOAD
= 1 nF 8 15 ns
t
F
TurnOff Fall Time C
LOAD
= 1 nF 8 15 ns
7. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
J
= T
A
= 25_C.
9. Exclude overshoot voltage at startup.
10.This parameter, although guaranteed by design, is not tested in production.
NCP51705
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9
TYPICAL PERFORMANCE CHARACTERISTICS
Typical characteristics are provided at 25°C and V
DD
= 20 V unless otherwise noted.
Figure 4. Operating Current (I
DD
) vs. Operating
Voltage (V
DD
)
Figure 5. Operating Current (I
DD
) vs. Operating
Frequency
Figure 6. Propagation Delay Time vs.
Operating Voltage (V
DD
)
Figure 7. Sourcing Current vs. Operating Voltage
(V
DD
)
Figure 8. Sinking Current vs. Operating Voltage
(V
DD
)
Figure 9. Operating Current (I
DD
) vs.
Temperature

NCP51705MNTXG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers SIC MOSFET DRIVER
Lifecycle:
New from this manufacturer.
Delivery:
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