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DS18B20+PAR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
DS18B20-PAR
16 of 19
MASTER MODE DATA (LSB FIRST) COMMENTS
RX 9 data bytes Master reads entire scratchpad including CRC. The master
then recalculates the CRC of the first eight data bytes from the
scratchpad and compares the calculated CRC with the read
CRC (byte 9). If they match, the master continues; if not, the
read operation is repeated.
DS18B20-PAR OPERATION EXAMPLE 2
In this example there is only one DS18B20-PAR on the bus. The master writes to the T
H
, T
L
, and
configuration registers in the DS18B20-PAR scratchpad and then reads the scratchpad and recalculates
the CRC to verify the data. The master then copies the scratchpad contents to EEPROM.
MASTER MODE DATA (LSB FIRST) COMMENTS
TX Reset Master issues reset pulse.
RX Presence DS18B20-PAR responds with presence pulse.
TX CCh Master issues Skip ROM command.
TX 4Eh Master issues Write Scratchpad command.
TX 3 data bytes Master sends three data bytes to scratchpad (T
H
, T
L
, and config).
TX Reset Master issues reset pulse.
RX Presence DS18B20-PAR responds with presence pulse.
TX CCh Master issues Skip ROM command.
TX BEh Master issues Read Scratchpad command.
RX 9 data bytes Master reads entire scratchpad including CRC. The master then
recalculates the CRC of the first eight data bytes from the
scratchpad and compares the calculated CRC with the read CRC
(byte 9). If they match, the master continues; if not, the read
operation is repeated.
TX Reset Master issues reset pulse.
RX Presence DS18B20-PAR responds with presence pulse.
TX CCh Master issues Skip ROM command.
TX 48h Master issues Copy Scratchpad command.
TX DQ line held high by
strong pullup
Master applies strong pullup to DQ for at least 10 ms while copy
operation is in progress.
DS18B20-PAR
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ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to ground –0.5V to +6.0V
Operating temperature –55°C to +100°C
Storage temperature –55°C to +125°C
Soldering temperature See J-STD-020A Specification
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS (-55°C to +100°C; V
PU
=3.0V to 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Pullup Supply
Voltage
V
PU
3.0 5.5 V 1,2
Thermometer Error t
ERR
-10°C to +85°C ±½
-55°C to +100°C ±2
°C
3
Input Logic Low V
IL
-0.3 +0.8 V 1,4,5
Input Logic High V
IH
3.0 5.5 V 1,6
Sink Current I
L
V
I/O
=0.4V 4.0 mA 1
Active Current I
DQA
1 1.5 mA 7
DQ Input Current I
DQ
5 µA 8
Drift
±0.2 °C 9
NOTES:
1. All voltages are referenced to ground.
2. The Pullup Supply Voltage specification assumes that the pullup device (resistor or transistor) is
ideal, and therefore the high level of the pullup is equal to V
PU
. In order to meet the V
IH
spec of the
DS18B20-PAR, the actual supply rail for the strong pullup transistor must include margin for the
voltage drop across the transistor when it is turned on; thus: V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
3. See typical performance curve in Figure 16.
4. Logic low voltages are specified at a sink current of 4 mA.
5. To always guarantee a presence pulse under low voltage parasite power conditions, V
ILMAX
may have
to be reduced to as low as 0.5V.
6. Logic high voltages are specified at a source current of 1 mA.
7. Active current refers to supply current during active temperature conversions or EEPROM writes.
8. DQ line is high (“hi-Z” state).
9. Drift data is based on a 1000 hour stress test at 125°C.
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
(-55°C to +100°C; V
PU
=3.0V to 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS
NV Write Cycle Time t
wr
2 10 ms
EEPROM Writes N
EEWR
-55°C to +55°C 50k writes
EEPROM Data Retention t
EEDR
-55°C to +55°C 10 years
DS18B20-PAR
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AC ELECTRICAL CHARACTERISTICS (-55°C to +100°C; V
PU
=3.0V to 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Temperature Conversion t
CONV
9-bit resolution 93.75 ms 1
Time 10-bit resolution 187.5 ms 1
11-bit resolution 375 ms 1
12-bit resolution 750 ms 1
Time to Strong Pullup
On
t
SPON
Start Convert T or
Copy Scratchpad
Command Issued
10 µs
Time Slot t
SLOT
60 120 µs 1
Recovery Time t
REC
1 µs 1
Write 0 Low Time r
LOW0
60 120 µs 1
Write 1 Low Time t
LOW1
1 15 µs 1
Read Data Valid t
RDV
15 µs 1
Reset Time High t
RSTH
480 µs 1
Reset Time Low t
RSTL
480 960 µs 1,2
Presence Detect High t
PDHIGH
15 60 µs 1
Presence Detect Low t
PDLOW
60 240 µs 1
Capacitance C
IN/OUT
25 pF
NOTES:
1. Refer to timing diagrams in Figure 17.
2. If t
RSTL
> 960 μs, a power on reset may occur.
TYPICAL PERFORMANCE CURVE Figure 16
DS18B20-PAR Typical Error Curve
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0 10203040506070
Reference Temp (C)
Thermometer Error (C)
Mean Error
+3
σ
Error
-3
σ
Error
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

DS18B20+PAR

Mfr. #:
Buy DS18B20+PAR
Manufacturer:
Maxim Integrated
Description:
Board Mount Temperature Sensors Prgmble Resolution 1-Wire Parasite Pw
Lifecycle:
New from this manufacturer.
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