ISSI
®
IS61C632A
Integrated Silicon Solution, Inc.
13
SR001-1B
05/18/98
READ/WRITE CYCLE TIMING
Single Read
Single Write
High-Z
High-Z
DATAOUT
DATAIN
OE
CE3
CE2
CE1
BW4-BW1
BWE
GW
A14-A0
ADV
ADSC
ADSP
CLK
RD1 WR1
WR1
1a
1a
2a 2b 2c 2d
Unselected
Burst Read
tKQX
tKC
tKLtKH
tSS tSH
ADSP is blocked by CE1 inactive
tSS tSH
tAS tAH
tWS tWH
tWS tWH
tWS tWH
RD2 RD3
tCES tCEH
tCES tCEH
tCES tCEH
CE2 and CE3 only sampled with ADSP or ADSC
CE1 Masks ADSP
Unselected with CE3
tOEQ
tOEQX
tOELZ
tKQLZ
tKQ
tOEHZ
tKQX
tKQHZ
tDS tDH
tKQHZ
ISSI
®
IS61C632A
14
Integrated Silicon Solution, Inc.
SR001-1B
05/18/98
SNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-4 -5 -6 -7 -8
Symbol Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tKC Cycle Time 8 10 12 13 15 ns
tKH Clock High Time 4 4 4 6 6 ns
tKL Clock Low Time 4 4 4 6 6 ns
tKQ Clock Access Time 4 5 6 7 8 ns
tKQX
(4)
Clock High to Output Invalid 1.5 1.5 2 2 2 ns
tKQLZ
(4,5)
Clock High to Output Low-Z 0 0 0 0 0 ns
tKQHZ
(4,5)
Clock High to Output High-Z 1.5 4 1.5 5 2 6 2 6 2 6 ns
tOEQ Output Enable to Output Valid 4.5 5 6 6 6 ns
tOEQX
(4)
Output Disable to Output Invalid 0 0 0 0 0 ns
tOELZ
(4,5)
Output Enable to Output Low-Z 0 0 0 0 0 ns
tOEHZ
(4,5)
Output Disable to Output High-Z 4.5 4.8 6 6 6 ns
tAS Address Setup Time 2.5 2.5 2.5 2.5 2.5 ns
tSS Address Status Setup Time 2.5 2.5 2.5 2.5 2.5 ns
tCES Chip Enable Setup Time 2.5 2.5 2.5 2.5 2.5 ns
tAH Address Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tSH Address Status Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tCEH Chip Enable Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tZZS ZZ Standby
(1)
2— 2— 2— 2— 2—cyc
tZZREC ZZ Recovery
(2)
2— 2— 2— 2— 2—cyc
tCFG Configuration Setup
(3)
25 35 45 52 60 ns
Notes:
1. The assertion of ZZ allows the SRAM to enter a lower power state than when deselected within the time specified. Data
retention is guaranteed when ZZ is asserted and clock remains active.
2. and must not be asserted for at least 2 cyc after leaving ZZ state.
3. Configuration signal MODE is static and must not change during normal operation.
4. Guaranteed but not 100% tested. This parameter is periodically sampled.
5. Tested with the load in Figure 2.
ISSI
®
IS61C632A
Integrated Silicon Solution, Inc.
15
SR001-1B
05/18/98
SNOOZE AND RECOVERY CYCLE TIMING
Single Read
High-Z
High-Z
DATA
OUT
DATA
IN
OE
CE3
CE2
CE1
BW4-BW1
BWE
GW
A14-A0
ADV
ADSC
ADSP
CLK
RD1
1a
Read
Snooze with Data Retention
t
KC
t
KL
t
KH
t
SS
t
SH
t
AS
t
AH
RD2
t
CES
t
CEH
t
CES
t
CEH
t
CES
t
CEH
t
OEQ
t
OEQX
t
OELZ
t
KQLZ
t
KQ
t
OEHZ
t
KQX
t
KQHZ
ZZ
t
ZZS
t
ZZREC

IS61C632A-6TQI-TR

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 1Mb 32Kx32 6ns 3.3V Indust Temp
Lifecycle:
New from this manufacturer.
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