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IS61C632A-6TQI-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
ISSI
®
IS61C632A
4
Integrated Silicon Solution, Inc.
SR001-1B
05/18/98
TRUTH TABLE
ADDRESS
OPERATION USED CE2 DQ
Deselected, Power-down None H X X X L X X X High-Z
Deselected, Power-down None L L X L XXXXHigh-Z
Deselected, Power-down None L X H L XXXXHigh-Z
Deselected, Power-down None L L X H L X X X High-Z
Deselected, Power-down None L X H H L X X X High-Z
Read Cycle, Begin Burst External L H L L X X X L Q
Read Cycle, Begin Burst External L H L L X X X H High-Z
Write Cycle, Begin Burst External L H L H L X L X D
Read Cycle, Begin Burst External L H L H L X H L Q
Read Cycle, Begin Burst External L H L H L X H H High-Z
Read Cycle, Continue Burst Next X X X H H L H L Q
Read Cycle, Continue Burst Next X X X H H L H H High-Z
Read Cycle, Continue Burst Next H X X X H L H L Q
Read Cycle, Continue Burst Next H X X X H L H H High-Z
Write Cycle, Continue Burst Next X X X H H L L X D
Write Cycle, Continue Burst Next H X X X H L L X D
Read Cycle, Suspend Burst Current X X X HHHHLQ
Read Cycle, Suspend Burst Current X X X HHHHHHigh-Z
Read Cycle, Suspend Burst Current H X X X H H H L Q
Read Cycle, Suspend Burst Current H X X X HHHHHigh-Z
Write Cycle, Suspend Burst Current X X X H H H L X D
Write Cycle, Suspend Burst Current H X X X H H L X D
Notes:
1. All inputs except must meet setup and hold times for the Low-to-High transition of clock (CLK).
2. Wait states are inserted by suspending burst.
3. X means don't care. =L means any one or more byte write enable signals ( 1- 4) and are LOW or is LOW.
=H means all byte write enable signals are HIGH.
4. For a Write operation following a Read operation, must be HIGH before the input data required setup time and held HIGH
throughout the input data hold time.
5. LOW always initiates an internal READ at the Low-to-High edge of clock. A WRITE is performed by setting one or more
byte write enable signals and LOW or LOW for the subsequent L-H edge of clock.
PARTIAL TRUTH TABLE
FUNCTION
READ H H X X X X
READ H X H H H H
WRITE Byte 1 H L L H H H
WRITE All Bytes X LLLLL
WRITE All Bytes L XXXXX
ISSI
®
IS61C632A
Integrated Silicon Solution, Inc.
5
SR001-1B
05/18/98
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address 1st Burst Address 2nd Burst Address 3rd Burst Address
A1 A0 A1 A0 A1 A0 A1 A0
00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00
LINEAR BURST ADDRESS TABLE (MODE = GNDQ)
0,0
1,0
0,1A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
TBIAS Temperature Under Bias –10 to +85 °C
TSTG Storage Temperature –55 to +150 °C
PD Power Dissipation 1.8 W
IOUT Output Current (per I/O) 100 mA
VIN, VOUT Voltage Relative to GND for I/O Pins –0.5 to VCCQ + 0.3 V
VIN Voltage Relative to GND for –0.5 to 5.5 V
for Address and Control Inputs
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
ISSI
®
IS61C632A
6
Integrated Silicon Solution, Inc.
SR001-1B
05/18/98
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to +70°C 3.3V +10%, –5%
Industrial –40°C to +85°C 3.3V +10%, –5%
DC ELECTRICAL CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage IOH = –5.0 mA 2.4 — V
VOL Output LOW Voltage IOL = 5.0 mA — 0.4 V
VIH Input HIGH Voltage 2.0 VCCQ + 0.3 V
VIL Input LOW Voltage –0.3 0.8 V
ILI Input Leakage Current GND ≤ VIN ≤ VCCQ
(2)
Com. –5 5 µA
Ind. –10 1-
ILO Output Leakage Current GND ≤ VOUT ≤ VCCQ, = VIH Com. –5 5 µA
Ind. –10 10
POWER SUPPLY CHARACTERISTICS (Over Operating Range)
-4 -5 -6 -7 -8
Symbol Parameter Test Conditions
Typ. Max Typ. Max. Typ. Max. Typ. Max. Typ. Max. Uni
t
ICC AC Operating Device Selected, Com. 150 180 140 170 130 160 120 150 110 140 mA
Supply Current All Inputs = VIL or VIH Ind. — — — — 140 170 130 160 120 150 µA
= VIH,
Cycle Time ≥ tKC min.
ISB Standby Current Device Deselected, Com. 15 45 15 45 15 45 15 45 15 45 mA
VCC = Max., Ind. — — — — 20 50 20 50 20 50 µA
All Inputs = VIH or VIL
CLK Cycle Time ≥ tKC min.
IZZ Power-Down Mode ZZ = VCCQ, CLK Running Com. 1 10 1 10 1 10 1 10 1 10 mA
Current All Inputs ≤ GND + 0.2V Ind. — — — — 2 20 2 20 2 20 mA
or ≥ VCC – 0.2V
Note:
1. MODE pin has an internal pull-up. ZZ pin has an internal pull-down. These pins may be a No Connect, tied to GND, or tied to
V
CCQ.
2. MODE pin should be tied to Vcc or GND. They exhibit ±10 µA maximum leakage current when tied to ≤ GND + 0.2V or ≥ Vcc –
0.2V.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IS61C632A-6TQI-TR

Mfr. #:
Buy IS61C632A-6TQI-TR
Manufacturer:
ISSI
Description:
SRAM 1Mb 32Kx32 6ns 3.3V Indust Temp
Lifecycle:
New from this manufacturer.
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