ISSI
®
IS61C632A
Integrated Silicon Solution, Inc.
7
SR001-1B
05/18/98
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 1.5 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
AC TEST LOADS
Figure 1
Output
Buffer
Z
O
= 50
1.5V
50
30 pF
317
5 pF
Including
jig and
scope
351
OUTPUT
3.3V
Figure 2
ISSI
®
IS61C632A
8
Integrated Silicon Solution, Inc.
SR001-1B
05/18/98
READ CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-4 -5 -6 -7 -8
Symbol Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tKC Cycle Time 8 10 12 13 15 ns
tKH Clock High Time 4 4 4 6 6 ns
tKL Clock Low Time 4 4 4 6 6 ns
tKQ Clock Access Time 4 5 6 7 8 ns
tKQX
(2)
Clock High to Output Invalid 1.5 1.5 2 2 2 ns
tKQLZ
(2,3)
Clock High to Output Low-Z 0 0 0 0 0 ns
tKQHZ
(2,3)
Clock High to Output High-Z 1.5 4 1.5 5 2 6 2 6 2 6 ns
tOEQ Output Enable to Output Valid 4 5 6 6 6 ns
tOEQX
(2)
Output Disable to Output Invalid 0 0 0 0 0 ns
tOELZ
(2,3)
Output Enable to Output Low-Z 0 0 0 0 0 ns
tOEHZ
(2,3)
Output Disable to Output High-Z 4.5 4.8 6 6 6 ns
tAS Address Setup Time 2.5 2.5 2.5 2.5 2.5 ns
tSS Address Status Setup Time 2.5 2.5 2.5 2.5 2.5 ns
tWS Write Setup Time 2.5 2.5 2.5 2.5 2.5 ns
tCES Chip Enable Setup Time 2.5 2.5 2.5 2.5 2.5 ns
tAVS Address Advance Setup Time 2.5 2.5 2.5 2.5 2.5 ns
tAH Address Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tSH Address Status Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tWH Write Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tCEH Chip Enable Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tAVH Address Advance Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tCFG Configuration Setup
(1)
25 35 45 66.7 80 ns
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with the load in Figure 2.
ISSI
®
IS61C632A
Integrated Silicon Solution, Inc.
9
SR001-1B
05/18/98
READ CYCLE TIMING
Single Read
High-Z
High-Z
DATA
OUT
DATA
IN
OE
CE3
CE2
CE1
BW4-BW1
BWE
GW
A14-A0
ADV
ADSC
ADSP
CLK
RD1 RD2
1a
2c 2d 3a
Unselected
Burst Read
t
KQX
t
KC
t
KL
t
KH
t
SS
t
SH
t
SS
t
SH
t
AS
t
AH
t
WS
t
WH
t
WS
t
WH
RD3
t
CES
t
CEH
t
CES
t
CEH
t
CES
t
CEH
CE2 and CE3 only sampled with ADSP or ADSC
CE1 Masks ADSP
Unselected with CE2
t
OEQ
t
OEQX
t
OELZ
t
KQLZ
t
KQ
t
OEHZ
t
KQHZ
ADSC initiate read
ADSP is blocked by CE1 inactive
t
AVH
t
AVS
Suspend Burst
Pipelined Read
2a 2b

IS61C632A-6TQI-TR

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 1Mb 32Kx32 6ns 3.3V Indust Temp
Lifecycle:
New from this manufacturer.
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