OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NCP5030MTTXG

P1-P3P4-P6P7-P9P10-P12P13-P14
NCP5030
http://onsemi.com
4
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Power Supply Voltage (Note 2) V
bat
7.0 V
Over Voltage Protection V
out
6.5 V
Human Body Model (HBM) ESD Rating (Note 3) ESD HBM 2.0 kV
Machine Model (MM) ESD Rating (Note 3) ESD MM 200 V
Digital Input Voltage
Digital Input Current
CTRL −0.3 < V
in
< V
bat
+ 0.3
1.0
V
mA
WDFN 3x4 Package
Power Dissipation @ T
A
= +85°C (Note 5)
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Air
P
D
R
q
JC
R
q
JA
Internally Limited
6.0
(Note 6)
W
°C/W
°C/W
Operating Ambient Temperature Range T
A
−40 to +85 °C
Operating Junction Temperature Range T
J
−40 to +125 °C
Maximum Junction Temperature T
JMAX
+150 °C
Storage Temperature Range T
stg
−65 to +150 °C
Moisture Sensitivy Level (Note 7) MSL 1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T
A
= 25°C.
2. According to JEDEC standard JESD22−A108B.
3. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM) "2.0 kV per JEDEC standard: JESD22−A114 for all pins
Machine Model (MM) "200 V per JEDEC standard: JESD22−A115 for all pins
4. Latchup Current Maximum Rating: ±100 mA per JEDEC standard: JESD78.
5. The thermal shutdown set to 160°C (typical) avoids irreversible damage on the device due to power dissipation.
6. For the 12−Pin 3x4 WDFN Package, the R
q
JA
is highly dependent on the PCB heat−sink area. For example, R
q
JA
can be 57°C/W for a one
layer board and 43 for a four layer board.
7. Per IPC/JEDEC standard: J−STD−020A.
NCP5030
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (Limits apply for T
A
between −40°C to +85°C and V
in
= 3.6 V unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
Operational Power Supply V
IN
2.7 − 5.5 V
Maximum Inductor Current (Note 11) (See Figure 8) I
PEAK_MAX
−20% 4.0 +20% A
Switches P1 and P2 ON Resistance P
MOS
R
DSON
− 100 − mW
Switches N1 and N2 ON Resistance N
MOS
R
DSON
− 100 − mW
Switches P1 and P2 Leakage Current P
MOS
L − 0.5 − mA
Switches N1 and N2 Leakage Current N
MOS
L − 0.5 − mA
Internal Oscillator Frequency (Note 8) F
OSC
600 700 800 kHz
Efficiency (Notes 9, 10 and 11) E
FF
− 85 − %
Output Voltage Range (Note 11) V
OUT
2.2 − 5.5 V
V
OUT
−V
IN
Threshold to Change Mode from Boost to Buck−Boost T
BOOST
− 375 − mV
V
IN
−V
OUT
Threshold to Change Mode from Buck−Boost to Buck T
BUCK
− 650 − mV
Threshold to Change Mode Hysteresis H
MODE
− 100 − mV
Available Output Power (Note 11)
When V
in
≥ 3.1 V (V
out
= 4.7 V, 900 mA)
P
OUT
4.3 − −
W
Feedback Voltage Threshold in Steady State at 25°C F
BV
190 200 210 mV
Line Regulation, Measured on FB Pin (Note 8)
From DC to 100 Hz and R
FB
= 1 W
F
BVLR
− 5.0 − mV/V
Feedback Input Current F
BC
− − 0.1 mA
Standby Current at I
OUT
= 0 mA, CTRL = Low, V
bat
= 4.2 V I
STB
− 0.3 3.0 mA
Quiescent Current Switching at I
OUT
= 0 mA, CTRL = High, V
bat
= 4.2 V
(Note 12)
I
QS
− 5.0 − mA
V
IN
Undervoltage Lockout
Threshold to Enable the Converter
U
VLO
2.2 2.4 2.6
V
Undervoltage Lockout Hysteresis U
VLOH
− 100 − mV
Soft−start Time (Note 11) S
ST
− 1000 − ms
Limit of CTRL pin PWM Dimming Frequency (Note 11) F
DIM
− 0.2 − kHz
Thermal Shutdown Protection T
SD
− 160 − °C
Thermal Shutdown Protection Hysteresis T
SDH
− 20 − °C
Voltage Input Logic Low V
IL
− − 0.4 V
Voltage Input Logic High V
IH
1.2 − − V
CTRL Pin Pulldown Resistance R
CTRL
150 220 290 kW
8. T
A
between −10°C to +85°C
9. Efficiency is defined by 100 * (P
out
/P
in
) at 25°C. V
in
= 3.3 V, I
OUT
= 500 mA, Load = 1 LED (V
f
= 3.9 V)
10. L = 4.7 mH (TDK RLF7030T−4R7M3R4), C
out
= 22 mF X5R
11. Guaranteed by design and characterized.
12. The overall tolerance is dependent on the accuracy of the external resistor.
NCP5030
http://onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 4. Efficiency vs. V
IN
LED = Lumileds
LUXEON III, L = TDK RLF7030T−4R7
V
IN
(V)
5.55.04.54.03.53.02.5
50
55
60
70
80
85
95
100
Figure 5. Buck Mode Efficiency vs. I
OUT
@
V
OUT
= 3.1 V L = TDK RLF7030T−4R7
Figure 6. Buck−Boost Mode Eff. vs. I
OUT
@
V
OUT
= 3.8 V L = TDK RLF7030T−4R7
I
out
(mA) I
out
(mA)
900700 8006004002000
50
60
70
80
90
100
900700 8006004002000
50
60
70
80
90
100
Figure 7. Boost Mode Efficiency vs. I
OUT
@
V
OUT
= 5.0 V L = TDK RLF7030T−4R7
Figure 8. I
PEAK_MAX
vs. R
PCA
I
out
(mA) R
PCA
(kW)
900700 8006004002000
50
60
70
80
90
100
100010010
0
0.5
1.0
1.5
2.5
3.0
3.5
4.0
EFF (%)
EFF (%)
EFF (%)
EFF (%)
I
PEAK(max)
(A)
65
75
90
Efficiency = 100 X (P
LED
/P
IN
)
100 mA 400 mA
900 mA
V
in
= 5.5 V
V
in
= 4.5 V
V
in
= 3.9 V
V
in
= 4.0 V
V
in
= 4.4 V
V
in
= 3.4 V
V
in
= 3.6 V
V
in
= 3.1 V
V
in
= 4.1 V
V
in
= 3.6 V
2.0
500300100 500300100
500300100
P1-P3P4-P6P7-P9P10-P12P13-P14

NCP5030MTTXG

Mfr. #:
Buy NCP5030MTTXG
Manufacturer:
ON Semiconductor
Description:
LED Lighting Drivers NSEB THAI LED DRIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet