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NB100LVEP91DWG

P1-P3P4-P6P7-P9P10-P11
NB100LVEP91
www.onsemi.com
4
Table 3. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Unit
V
CC
Positive Power Supply GND = 0 V 3.8 to 0 V
V
EE
Negative Power Supply GND = 0 V −3.8 to 0 V
V
I
Positive Input Voltage GND = 0 V V
I
≤ V
CC
3.8 to 0 V
V
OP
Operating Voltage GND = 0 V V
CC
− V
EE
7.6 to 0 V
I
out
Output Current Continuous
Surge
50
100
mA
I
BB
PECL V
BB
Sink/Source ± 0.5 mA
T
A
Operating Temperature Range −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction-to-Ambient)
JESD 51−3 (1S-Single Layer Test Board)
0 lfpm
500 lfpm
SOIC−20 WB 90
60
°C/W
q
JA
Thermal Resistance (Junction-to-Ambient)
JESD 51−6 (2S2P Multilayer Test Board) with Filled Thermal Vias
0 lfpm
500 lfpm
QFN−24 37
32
°C/W
q
JC
Thermal Resistance (Junction-to-Case) Standard
Board
SOIC−20 WB
QFN−24
30 to 35
11
°C/W
T
sol
Wave Solder (Pb-Free) 225 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 4. DC CHARACTERISTICS POSITIVE INPUTS (V
CC
= 2.5 V, V
EE
= −2.375 to −3.8 V, GND = 0 V (Note 1))
Symbol
Characteristic
−40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
CC
Positive Power Supply Current 10 14 20 10 14 20 10 14 20 mA
V
IH
Input HIGH Voltage (Single-Ended) 1335 V
CC
1335 V
CC
1335 V
CC
mV
V
IL
Input LOW Voltage (Single-Ended) GND 875 GND 875 GND 875 mV
V
IHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 2)
0 2.5 0 2.5 0 2.5 V
I
IH
Input HIGH Current (@ V
IH
) 150 150 150
mA
I
IL
Input LOW Current (@ V
IL
)
D
D
0.5
−150
0.5
−150
0.5
−150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input parameters vary 1:1 with V
CC
. V
CC
can vary +1.3 V / −0.125 V.
2. V
IHCMR
min varies 1:1 with GND. V
IHCMR
max varies 1:1 with V
CC
.
NB100LVEP91
www.onsemi.com
5
Table 5. DC CHARACTERISTICS POSITIVE INPUT (V
CC
= 3.3 V; V
EE
= −2.375 V to −3.8 V; GND = 0 V (Note 1))
Symbol
Characteristic
−40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
CC
Positive Power Supply Current 10 16 24 10 16 24 10 16 24 mA
V
IH
Input HIGH Voltage (Single-Ended) 2135 V
CC
2135 V
CC
2135 V
CC
mV
V
IL
Input LOW Voltage (Single-Ended) GND 1675 GND 1675 GND 1675 mV
V
BB
PECL Output Voltage Reference 1775 1875 1975 1775 1875 1975 1775 1875 1975 mV
V
IHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 2)
0 3.3 0 3.3 0 3.3 V
I
IH
Input HIGH Current (@ V
IH
) 150 150 150
mA
I
IL
Input LOW Current (@ V
IL
)
D
D
0.5
−150
0.5
−150
0.5
−150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input parameters vary 1:1 with V
CC
. V
CC
can vary +0.5 / −0.925 V.
2. V
IHCMR
min varies 1:1 with GND. V
IHCMR
max varies 1:1 with V
CC
.
Table 6. DC CHARACTERISTICS NECL OUTPUT (V
CC
= 2.375 V to 3.8 V; V
EE
= −2.375 V to −3.8 V; GND = 0 V (Note 1))
Symbol Characteristic
−40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
EE
Negative Power Supply Current 40 50 60 38 50 68 38 50 68 mA
V
OH
Output HIGH Voltage (Note 2) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV
V
OL
Output LOW Voltage (Note 2) −1945 −1770 −1600 −1945 −1770 −1600 −1945 −1770 −1600 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Output parameters vary 1:1 with GND.
2. All loading with 50 W resistor to GND − 2.0 V.
NB100LVEP91
www.onsemi.com
6
Table 7. AC CHARACTERISTICS (V
CC
= 2.375 V to 3.8 V; V
EE
= −2.375 V to −3.8 V; GND = 0 V)
Symbol
Characteristic
−40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
V
OUTPP
Output Voltage Amplitude (Figure 4) (Note 1)
f
in
ĂV 1.0 GHz
f
in
ĂV 1.5 GHz
f
in
ĂV 2.0 GHz
575
525
300
800
750
600
600
525
250
800
750
550
550
400
150
800
750
500
mV
t
PLH
t
PHL0
Propagation Delay
Differential
D to Q
Single-Ended
375
300
500
450
600
650
375
300
500
450
600
675
400
300
550
500
650
750
ps
t
SKEW
Pulse Skew (Note 2)
Output-to-Output (Note 3)
Part-to-Part (Diff) (Note 3)
15
25
50
75
95
125
15
30
50
75
105
125
15
30
70
80
105
150
ps
t
JITTER
RMS Random Clock Jitter (Note 4)
f
in
= 2.0 GHz
Peak-to-Peak Data Dependant Jitter (Note 5)
f
in
= 2.0 Gb/s
0.5
20
2.0 0.5
20
2.0 0.5
20
2.0
ps
V
INPP
Input Voltage Swing (Differential Configuration)
(Note 6)
200 800 1200 200 800 1200 200 800 1200 mV
t
r
, t
f
Output Rise/Fall Times @ 50 MHz
(20% − 80%) Q, Q
75 150 250 75 150 250 75 150 275 ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to GND − 2.0 V. Input edge rates 150 ps (20% − 80%).
2. Pulse Skew = |t
PLH
− t
PHL
|
3. Skews are valid across specified voltage range, part-to-part skew is for a given temperature.
4. RMS Jitter with 50% Duty Cycle Input Clock Signal.
5. Peak-to-Peak Jitter with input NRZ PRBS 2
31−1
at 2.0 Gb/s.
6. Input voltage swing is a single-ended measurement operating in differential mode. The device has a DC gain of ≈ 50.
Figure 4. Output Voltage Amplitude (V
OUTPP
) / RMS Jitter vs.
Input Frequency (f
in
) at Ambient Temperature (Typical)
INPUT FREQUENCY (GHz)
0.5 1.0 1.5 2.0 2.5
250
350
450
550
650
750
850
OUTPUT VOLTAGE AMPLITUDE
(mV)
RMS JITTER (ps)
9.0
8.0
10
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
RMS JITTER
AMP
P1-P3P4-P6P7-P9P10-P11

NB100LVEP91DWG

Mfr. #:
Buy NB100LVEP91DWG
Manufacturer:
ON Semiconductor
Description:
Translation - Voltage Levels 2.5V/3.3V Any LVL to -2.5V/-3.3V/-5V NECL
Lifecycle:
New from this manufacturer.
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