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PSMN4R0-30YL,115

P1-P3P4-P6P7-P9P10-P12P13-P15
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
1.4 Quick reference data
PSMN4R0-30YL
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
Rev. 04 — 10 March 2011 Product data sheet
LFPAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 30 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
--100A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --69W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=15A;
T
j
=25°C
-2.724mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=4.5V; I
D
=10A;
V
DS
= 12 V; see Figure 14;
see Figure 15
-4.3-nC
Q
G(tot)
total gate charge - 17.6 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
V
GS
=10V; T
j(init)
=25°C;
I
D
=99A; V
sup
≤ 30 V;
R
GS
=50Ω; unclamped
--41mJ
PSMN4R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 10 March 2011 2 of 14
NXP Semiconductors
PSMN4R0-30YL
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1Ssource
SOT669 (LFPAK)
2Ssource
3Ssource
4 G gate
mb D mounting base; connected to drain
mb
1234
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN4R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 30 V
V
DSM
peak drain-source voltage t
p
≤ 25 ns; f ≤ 500 kHz; E
DS(AL)
≤ 160 nJ;
pulsed
-35V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
=20kΩ -30V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
=100°C; see Figure 1 -76A
V
GS
=10V; T
mb
= 25 °C; see Figure 1 - 100 A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
=25°C;
see Figure 3
- 396 A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 -69W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 99 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 396 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=99A;
V
sup
≤ 30 V; R
GS
=50Ω; unclamped
-41mJ
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN4R0-30YL,115

Mfr. #:
Buy PSMN4R0-30YL,115
Manufacturer:
Nexperia
Description:
MOSFET <=30V N CH TRENCHFET
Lifecycle:
New from this manufacturer.
Delivery:
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