OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PSMN4R0-30YL,115

P1-P3P4-P6P7-P9P10-P12P13-P15
PSMN4R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 10 March 2011 3 of 14
NXP Semiconductors
PSMN4R0-30YL
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aac649
0
20
40
60
80
100
120
0 50 100 150 200
T
mb
(°C)
I
D
(A)
(1)
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
003aac650
10
-1
1
10
10
2
10
3
10
-1
1 10 10
2
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
DC
100 μs
10 μs
100 ms
10 ms
1 ms
PSMN4R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 10 March 2011 4 of 14
NXP Semiconductors
PSMN4R0-30YL
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
see Figure 4 - 1 1.82 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aac648
single shot
0.2
0.1
0.05
0.02
10
-2
10
-1
1
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ = 0.5
t
p
T
P
t
t
p
T
δ =
PSMN4R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 10 March 2011 5 of 14
NXP Semiconductors
PSMN4R0-30YL
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=250µA; V
GS
=0V; T
j
=25°C 30--V
I
D
=250µA; V
GS
=0V; T
j
= -55 °C 27 - - V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 11; see Figure 12
1.3 1.7 2.15 V
I
D
=1mA; V
DS
=V
GS
; T
j
= 150 °C;
see Figure 12
0.65 - - V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 12
--2.45V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
=25°C --1µA
V
DS
=30V; V
GS
=0V; T
j
= 150 °C - - 100 µA
I
GSS
gate leakage current V
GS
=16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=-16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=15A; T
j
= 25 °C - 3.73 5.25 mΩ
V
GS
=10V; I
D
=15A; T
j
= 150 °C;
see Figure 13
--7mΩ
V
GS
=10V; I
D
=15A; T
j
= 25 °C - 2.72 4 mΩ
R
G
gate resistance f = 1 MHz - 0.52 1.5 Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=10A; V
DS
=12V; V
GS
=10V;
see Figure 14; see Figure 15
- 36.6 - nC
I
D
=10A; V
DS
=12V; V
GS
=4.5V;
see Figure 14; see Figure 15
- 17.6 - nC
I
D
=0A; V
DS
=0V; V
GS
=10V - 33 - nC
Q
GS
gate-source charge I
D
=10A; V
DS
=12V; V
GS
=4.5V;
see Figure 14
; see Figure 15
-5.6-nC
Q
GS(th)
pre-threshold gate-source
charge
-3.6-nC
Q
GS(th-pl)
post-threshold gate-source
charge
-2-nC
Q
GD
gate-drain charge - 4.3 - nC
V
GS(pl)
gate-source plateau voltage V
DS
=12V; see Figure 14;
see Figure 15
-2.3-V
C
iss
input capacitance V
DS
=12V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 16
- 2090 - pF
C
oss
output capacitance - 469 - pF
C
rss
reverse transfer capacitance - 227 - pF
t
d(on)
turn-on delay time V
DS
=12V; R
L
=0.5Ω; V
GS
=4.5V;
R
G(ext)
=4.7Ω
-28-ns
t
r
rise time - 51 - ns
t
d(off)
turn-off delay time - 44 - ns
t
f
fall time - 18 - ns
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN4R0-30YL,115

Mfr. #:
Buy PSMN4R0-30YL,115
Manufacturer:
Nexperia
Description:
MOSFET <=30V N CH TRENCHFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet