PSMN4R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 10 March 2011 6 of 14
NXP Semiconductors
PSMN4R0-30YL
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
- 0.83 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=0V; V
DS
=20V
-39-ns
Q
r
recovered charge - 36 - nC
Table 6. Characteristics
…continued
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Forward transconductance as a function of
drain current; typical values
003aac639
0
20
40
60
80
01234
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C
003aac641
0
20
40
60
80
100
120
0246810
V
DS
(V)
I
D
(A)
V
GS
(V) = 3.2
2.2
2.4
2.6
2.8
3
4.5
10
003aac642
2
4
6
8
10
0 20406080100
I
D
(A)
R
DSon
(mΩ)
V
GS
(V) = 3.2
4.5
10
003aac644
0
20
40
60
80
100
0204060
I
D
(A)
g
fs
(S)
