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SIA527DJ-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
Vishay Siliconix
SiA527DJ
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
N- and P-Channel 12-V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFETs
• Thermally Enhanced PowerPAK
®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % R
g
Tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Portable Devices Such as Smart Phones, Tablet PCs
and Mobile Computing
- Load Switches
- Power Management
- DC/DC Converters
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() Max. I
D
(A) Q
g
(Typ.)
N-Channel 12
0.029 at V
GS
= 4.5 V
4.5
a
5.6 nC
0.034 at V
GS
= 2.5 V
4.5
a
0.044 at V
GS
= 1.8 V
4.5
a
0.065 at V
GS
= 1.5 V
4.5
a
P-Channel - 12
0.041 at V
GS
= - 4.5 V
- 4.5
a
10.5 nC
0.060 at V
GS
= - 2.5 V
- 4.5
a
0.110 at V
GS
= - 1.8 V
- 3.5
0.174 at V
GS
= - 1.5 V
- 1
Ordering Information:
SiA527DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
D
1
G
2
S
2
G
1
D
2
1
6
5
4
2
3
2.05 mm
2.05 mm
PowerPAK SC-70-6 Dual
D
1
D
2
N-Channel MOSFET
G
1
D
1
S
1
S
2
G
2
D
2
P-Channel MOSFET
Marking Code
X X X
E J X
Lot Traceability
and Date Code
Part # code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage
V
DS
12 - 12
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
4.5
a
- 4.5
a
A
T
C
= 70 °C
4.5
a
- 4.5
a
T
A
= 25 °C
4.5
a,b,c
- 4.5
a,b,c
T
A
= 70 °C
4.5
a,b,c
- 4.4
b,c
Pulsed Drain Current (t = 100 µs)
I
DM
20 - 15
Source Drain Current Diode Current
T
C
= 25 °C
I
S
4.5
a
- 4.5
a
T
A
= 25 °C
1.6
b,c
- 1.6
b,c
Maximum Power Dissipation
T
C
= 25 °C
P
D
7.8 7.8
W
T
C
= 70 °C
55
T
A
= 25 °C
1.9
b,c
1.9
b,c
T
A
= 70 °C
1.2
b,c
1.2
b,c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d,e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol
N-Channel P-Channel
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
b,f
t 5 s
R
thJA
52 65 52 65
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
12.5 16 12.5 16
www.vishay.com
2
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
Vishay Siliconix
SiA527DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
N-Ch 12
V
V
GS
= 0 V, I
D
= - 250 µA
P-Ch - 12
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
N-Ch 12
mV/°C
I
D
= - 250 µA
P-Ch - 3.6
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
I
D
= 250 µA
N-Ch - 2.5
I
D
= - 250 µA
P-Ch 2.4
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
N-Ch 0.4 1
V
V
DS
= V
GS
, I
D
= - 250 µA
P-Ch - 0.4 - 1
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
N-Ch ± 100
nA
P-Ch ± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 12 V, V
GS
= 0 V
N-Ch 1
µA
V
DS
= - 12 V, V
GS
= 0 V
P-Ch - 1
V
DS
= 12 V, V
GS
= 0 V, T
J
= 55 °C
N-Ch 10
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
P-Ch - 10
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
N-Ch 15
A
V
DS
- 5 V, V
GS
= - 4.5 V
P-Ch - 10
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 4.5 V, I
D
= 5 A
N-Ch 0.024 0.029
V
GS
= - 4.5 V, I
D
= - 4.3 A
P-Ch 0.033 0.041
V
GS
= 2.5 V, I
D
= 4.6 A
N-Ch 0.028 0.034
V
GS
= - 2.5 V, I
D
= - 3.6 A
P-Ch 0.049 0.060
V
GS
= 1.8 V, I
D
= 4.1 A
N-Ch 0.032 0.044
V
GS
= - 1.8 V, I
D
= - 1.5 A
P-Ch 0.070 0.110
V
GS
= 1.5 V, I
D
= 2 A
N-Ch 0.042 0.065
V
GS
= - 1.5 V, I
D
= - 1 A
P-Ch 0.095 0.174
Forward Transconductance
b
g
fs
V
DS
= 6 V, I
D
= 5 A
N-Ch 21
S
V
DS
= - 6 V, I
D
= - 4.6 A
P-Ch 12
Dynamic
a
Input Capacitance
C
iss
N-Channel
V
DS
= 6 V, V
GS
= 0 V, f = 1 MHz
P-Channel
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
N-Ch 500
pF
P-Ch 1500
Output Capacitance
C
oss
N-Ch 160
P-Ch 260
Reverse Transfer Capacitance
C
rss
N-Ch 100
P-Ch 250
Total Gate Charge
Q
g
V
DS
= 6 V, V
GS
= 8 V, I
D
= 6.5 A
N-Ch 9.7 15
nC
V
DS
= - 6 V, V
GS
= - 8 V, I
D
= - 5.6 A
P-Ch 17 26
N-Channel
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 6.5 A
P-Channel
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 5.6 A
N-Ch 5.6 8.5
P-Ch 10.5 16
Gate-Source Charge
Q
gs
N-Ch 0.72
P-Ch 2.3
Gate-Drain Charge
Q
gd
N-Ch 0.74
P-Ch 2.5
Gate Resistance
R
g
f = 1 MHz
N-Ch 0.7 3.5 7
P-Ch 1.1 5.5 11
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
3
Vishay Siliconix
SiA527DJ
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Dynamic
a
Tu r n - On D e l ay T i m e
t
d(on)
N-Channel
V
DD
= 6 V, R
L
= 1.2
I
D
5.2 A, V
GEN
= 4.5 V, R
g
= 1
P-Channel
V
DD
= - 6 V, R
L
= 1.3
I
D
- 4.5 A, V
GEN
= - 4.5 V, R
g
= 1
N-Ch 10 15
ns
P-Ch 22 35
Rise Time
t
r
N-Ch 10 15
P-Ch 22 35
Turn-Off Delay Time
t
d(off)
N-Ch 22 30
P-Ch 32 50
Fall Time
t
f
N-Ch 10 15
P-Ch 15 25
Tu r n - On D e l a y T i m e
t
d(on)
N-Channel
V
DD
= 6 V, R
L
= 1.2
I
D
5.2 A, V
GEN
= 8 V, R
g
= 1
P-Channel
V
DD
= - 6 V, R
L
= 1.3
I
D
- 4.5 A, V
GEN
= - 8 V, R
g
= 1
N-Ch 5 10
P-Ch 10 15
Rise Time
t
r
N-Ch 10 15
P-Ch 10 15
Turn-Off Delay Time
t
d(off)
N-Ch 18 30
P-Ch 30 40
Fall Time
t
f
N-Ch 10 15
P-Ch 12 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
N-Ch 4.5
A
P-Ch - 4.5
Pulse Diode Forward Current (t = 100 µs)
I
SM
N-Ch 20
P-Ch - 15
Body Diode Voltage
V
SD
I
S
= 5.2 A, V
GS
= 0 V
N-Ch 0.85 1.2
V
I
S
= - 4.5 A, V
GS
= 0 V
P-Ch - 0.87 - 1.2
Body Diode Reverse Recovery Time
t
rr
N-Channel
I
F
= 5.2 A, dI//dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 4.5 A, dI/dt = - 100 A/µs, T
J
= 25 °C
N-Ch 20 40
ns
P-Ch 30 60
Body Diode Reverse Recovery Charge
Q
rr
N-Ch 5 10
nC
P-Ch 15 30
Reverse Recovery Fall Time
t
a
N-Ch 8
ns
P-Ch 15
Reverse Recovery Rise Time
t
b
N-Ch 12
P-Ch 15
P1-P3P4-P6P7-P9P10-P12P13-P14

SIA527DJ-T1-GE3

Mfr. #:
Buy SIA527DJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR
Lifecycle:
New from this manufacturer.
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