Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
5
Vishay Siliconix
SiA527DJ
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
=2A;T
J
= 25 °C
I
D
=5A;
T
J
= 25 °C
I
D
= 5 A; T
J
= 125 °C
I
D
=2A;T
J
= 125 °C
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
1000
100
1
0.001 0.01 0.1 10
Power (W)
Pulse (s)
20
10
5
15
0
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
10
0.1
T
A
=25 °C
Single Pulse
100 µs
Limited byR
DS(on)
*
BVDSS Limited
1ms
10 ms
100 ms, 1 s
10 s, DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
-DrainCurrent (A)
I
D
