Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
9
Vishay Siliconix
SiA527DJ
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.1
0.0 0.2 0.6 1.00.4 0.8 1.2
1
10
100
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.3
- 50 - 25 25 75 1250 50 100 150
0.4
0.7
0.5
0.6
0.8
0.9
T
J
- Junction Temperature (°C)
V
GS(th)
- (V)
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
01 3245
0.12
0.09
0.06
0.03
0.15
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
I
D
= 1.5 A,
T
J
= 25 °C
I
D
= 5.5 A, T
J
= 25 °C
I
D
= 5.5 A, T
J
= 125 °C
I
D
= 1.5 A, T
J
= 125 °C
0
0.001 0.01 0.1 1 10 100 1000
5
10
15
20
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
0.01
0.1 1 10010
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
Limited by R
DS(on)
*
BVDSS Limited
T
A
= 25 °C
Single Pulse
1 ms
10 ms
10 s
100 ms
100 μs
DC
1 s