Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
7
Vishay Siliconix
SiA527DJ
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
0.1
0.01
Normalized Ef fective T ransient
Thermal Impedance
10
-3
10
-2
1 10 100010
-1
10
-4
100
Square Wave Pulse Duration (s)
Single Pulse
0.02
0.05
0.1
0.2
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
th JA
= 110 °C/W
3. T
JM
- T
A
= P
DM
Z
th JA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
-4
1
0.01
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
www.vishay.com
8
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
Vishay Siliconix
SiA527DJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
0 0.5 1.0 1.5 2.0 2.5 3.0
3
6
9
12
15
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
2 V
1 V
1.5 V
V
GS
= 5 V thru 2.5 V
0.02
03691215
0.04
0.08
0.12
0.16
0.06
0.10
0.14
I
D
- Drain Current (A)
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
0 3 6 9 12 15 18
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge
0
2
4
6
8
V
DS
= 9.6 V
V
DS
= 3 V
V
DS
= 6 V
I
D
= 5.6 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
0 0.5 1.0 1.5 2.0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
036912
300
600
900
1200
1500
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
rss
C
iss
0.7
- 50 - 25 25 75 1250 50 100 150
0.8
1.0
1.1
0.9
1.3
1.4
1.2
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 1.8 V
I
D
= 1.5 A
V
GS
= 4.5 V, 2.5 V
I
D
= 4.3 A
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
9
Vishay Siliconix
SiA527DJ
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.1
0.0 0.2 0.6 1.00.4 0.8 1.2
1
10
100
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.3
- 50 - 25 25 75 1250 50 100 150
0.4
0.7
0.5
0.6
0.8
0.9
T
J
- Junction Temperature (°C)
V
GS(th)
- (V)
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
01 3245
0.12
0.09
0.06
0.03
0.15
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
I
D
= 1.5 A,
T
J
= 25 °C
I
D
= 5.5 A, T
J
= 25 °C
I
D
= 5.5 A, T
J
= 125 °C
I
D
= 1.5 A, T
J
= 125 °C
0
0.001 0.01 0.1 1 10 100 1000
5
10
15
20
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
0.01
0.1 1 10010
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
Limited by R
DS(on)
*
BVDSS Limited
T
A
= 25 °C
Single Pulse
1 ms
10 ms
10 s
100 ms
100 μs
DC
1 s

SIA527DJ-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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