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3.2.4 Output Drive
The QT113B output is active low and can sink up to 5 mA of non-inductive current. If an inductive load is used, such
as a small relay, the load should be diode clamped to prevent damage. When set to operate in a proximity mode (at
high gain) the current should be limited to 1 mA to prevent gain shifting side effects from occurring, which happens
when the load current creates voltage drops on the die and bonding wires; these small shifts can materially influence
the signal level to cause detection instability as described below.
Care should be taken when the QT113B and the load are both powered from the same supply, and the supply is
minimally regulated. The QT113B derives its internal references from the power supply, and sensitivity shifts can
occur with changes in Vdd, as happens when loads are switched on. This can induce detection ‘cycling’, whereby an
object is detected, the load is turned on, the supply sags, the detection is no longer sensed, the load is turned off, the
supply rises and the object is reacquired, ad infinitum. To prevent this occurrence, the output should only be lightly
loaded if the device is operated from an unregulated supply, such as batteries. Detection ‘stiction’, the opposite
effect, can occur if a load is shed when Out is active.
The output of the QT113B can directly drive a resistively limited LED. The LED should be connected with its cathode
to the output and its anode towards Vcc, so that it lights when the sensor is active. If desired the LED can be
connected from Out to ground, and driven on when the sensor is inactive.
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4. Circuit Guidelines
4.1 Sample capacitor
Charge sampler C
S
can be virtually any plastic film or medium-K ceramic capacitor. The acceptable C
S
range is from
10 nF to 500 nF depending on the sensitivity required; larger values of C
S
demand higher stability to ensure reliable
sensing. Acceptable capacitor types include PPS film, polypropylene film, NPO/C0G ceramic, and X7R ceramic.
4.2 Option Strapping
The option pins OPT1 and OPT2 should never be left floating. If they are floated, the device will draw excess power
and the options will not be properly read on power-up. Intentionally, there are no pull-up resistors on these lines,
since pull-up resistors add to power drain if tied low.
The Gain input should be connected to either Vdd or Gnd.
Table 2-1 on page 7 and Table 3-1 on page 10 show the option strap configurations available.
4.3 Power Supply, PCB Layout
The power supply can range from 2.5 V to 5.0 V. At 3 V, current drain averages less than 600 µA in most cases, but
can be higher if C
S
is large. Increasing C
X
values will actually decrease power drain. Operation can be from batteries,
but be cautious about loads causing supply droop (see “Output Drive” on page 13).
As battery voltage sags with use or fluctuates slowly with temperature, the QT113B will track and compensate for
these changes automatically with only minor changes in sensitivity.
If the power supply is shared with another electronic system, care should be taken to assure that the supply is free of
digital spikes, sags, and surges which can adversely affect the QT113B. The QT113B will track slow changes in Vdd,
but it can be affected by rapid voltage steps.
if desired, the supply can be regulated using a conventional low current regulator, for example CMOS regulators that
have low quiescent currents. Bear in mind that such regulators generally have very poor transient line and load
stability; in some cases, shunting Vdd to Vss with a 4.7 k resistor to induce a continuous current drain can have a
very positive effect on regulator performance.
Parts placement: The chip should be placed to minimize the SNS2 trace length to reduce low frequency pickup, and
to reduce stray C
X
which degrades gain. The C
S
and R
series
resistors (see Figure 1-1 on page 3) should be placed as
close to the body of the chip as possible so that the SNS2 trace between R
series
and the SNS2 pin is very short,
thereby reducing the antenna-like ability of this trace to pick up high frequency signals and feed them directly into the
chip.
For best EMC performance the circuit should be made entirely with SMT components.
SNS trace routing: Keep the SNS2 electrode trace (and the electrode itself) away from other signal, power, and
ground traces including over or next to ground planes. Adjacent switching signals can induce noise onto the sensing
signal; any adjacent trace or ground plane next to or under either SNS trace will cause an increase in C
X
load and
desensitize the device.
For proper operation a 100 nF ceramic bypass capacitor must be used directly between Vdd and Vss; the bypass
cap should be placed very close to the device power pins.
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4.4 ESD Protection
The QT113B includes internal diode protection on its pins to absorb and protect the device from most induced
discharges, up to 20 mA. The electrode should always be insulated against direct ESD; a glass or plastic panel is
usually enough as a barrier to ESD. Glass breakdown voltages are typically over 10 kV / mm thickness.
ESD protection can be enhanced by adding a series resistor R
series
(see Figure 1-1 on page 3) in line with the
electrode, of value between 1 k and 50 k. The optimal value depends on the amount of load capacitance C
X
; a
high value of C
X
means R
series
has to be low. The pulse waveform on the electrode should be observed on an
oscilloscope, and the pulse should look very flat just before the falling edge. If the pulse voltage never flattens, the
gain of the sensor is reduced and there can be sensing instabilities.
R
series
and C
S
should both be placed very close to the chip.
The use of semiconductor transient protection devices, Zeners, or MOVs on the sense lead is not advised; these
devices have extremely large amounts of parasitic capacitance which will swamp the QT113B and render it unstable
or diminish gain.
4.5 EMC Issues
External AC fields (EMI) due to RF transmitters or electrical noise sources can cause false detections or unexplained
shifts in sensitivity.
The influence of external fields on the sensor is reduced by means of the R
series
described above in Section 4.4. The
C
S
capacitor and R
series
(see Figure 1-1 on page 3) form a natural low-pass filter for incoming RF signals; the roll-off
frequency of this network is defined by:
If, for example, C
S
= 22 nF, and R
series
= 10 k, the roll-off frequency to EMI is 723 Hz, vastly lower than any credible
external noise source (except for mains frequencies). However, R
series
and C
S
must both be placed very close to the
body of the IC so that the lead lengths between them and the IC do not form an unfiltered antenna at very high
frequencies.

QT113B-ISG

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
Capacitive Touch Sensors INTEGRATED-CIRCUIT
Lifecycle:
New from this manufacturer.
Delivery:
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