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Figure 2-3. Shielding Against Fringe Fields
If one side of the panel to which the electrode is fixed has moving traffic near it, these objects can cause inadvertent
detections. This is called ‘walk-by’ and is caused by the fact that the fields radiate from either surface of the electrode
equally well. Shielding in the form of a metal sheet or foil connected to circuit ground will prevent walk-by; putting a
small air gap between the grounded shield and the electrode will keep the value of C
X
lower to reduce loading and
keep gain high.
2.4.5 Sensitivity
The QT113B can be set for one of 2 gain levels using the GAIN pin 5 (Table 1-1). This sensitivity change is made by
altering the internal numerical threshold level required for a detection. Note that sensitivity is also a function of other
things: like the value of C
S
, electrode size and capacitance, electrode shape and orientation, the composition and
aspect of the object to be sensed, the thickness and composition of any overlaying panel material, and the degree of
ground coupling of both sensor and object.
2.4.5.1 Increasing Sensitivity
In some cases it may be desirable to increase sensitivity further, for example when using the sensor with very thick
panels having a low dielectric constant.
Sensitivity can often be increased by using a bigger electrode, reducing panel thickness, or altering panel
composition. Increasing electrode size can have diminishing returns, as high values of C
X
will reduce sensor gain
(Figure 5-1 to Figure 5-3 on page 19). The value of C
S
also has a dramatic effect on sensitivity, and this can be
increased in value with the tradeoff of reduced response time. Increasing the electrode's surface area will not
Sense
wire
Sense
wire
Unshielded
Electrode
Shielded
Electrode
Table 2-1. Gain Setting Strap Options
Gain Tie Pin 5 to
High – 6 counts Vdd
Low – 12 counts Vss (Gnd)
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substantially increase touch sensitivity if its diameter is already much larger in surface area than the object being
detected. Panel material can also be changed to one having a higher dielectric constant, which will help propagate
the field. Metal areas near the electrode will reduce the field strength and increase C
X
loading.
Ground planes around and under the electrode and its SNS trace will cause high C
X
loading and destroy gain. The
possible signal-to-noise ratio benefits of ground area are more than negated by the decreased gain from the circuit,
and so ground areas around electrodes are discouraged. Keep ground away from the electrodes and traces.
2.4.5.2 Decreasing Sensitivity
In some cases the QT113B may be too sensitive, even on low gain. In this case, gain can be lowered further by
decreasing C
S
.
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3. QT113B Specifics
3.1 Signal Processing
The QT113B processes all signals using 16-bit math, using a number of algorithms pioneered by Atmel. The
algorithms are specifically designed to provide for high 'survivability' in the face of numerous adverse environmental
changes.
3.1.1 Drift Compensation Algorithm
Signal drift can occur because of changes in C
X
and C
S
over time. It is crucial that drift be compensated for,
otherwise false detections, non-detections, and sensitivity shifts will follow.
Drift compensation (Figure 3-1) is performed by making the reference level track the raw signal at a slow rate, but
only while there is no detection in effect. The rate of adjustment must be performed slowly, otherwise legitimate
detections could be ignored. The QT113B drift compensates using a slew-rate limited change to the reference level;
the threshold and hysteresis values are slaved to this reference.
Figure 3-1. Drift Compensation
Once an object is sensed, the drift compensation mechanism ceases since the signal is legitimately high, and
therefore should not cause the reference level to change.
The QT113B drift compensation is asymmetric: the reference level drift-compensates in one direction faster than it
does in the other. Specifically, it compensates faster for decreasing signals than for increasing signals. Increasing
signals should not be compensated for quickly, since an approaching finger could be compensated for partially or
entirely before even approaching the sense electrode. However, an obstruction over the sense pad, for which the
sensor has already made full allowance for, could suddenly be removed leaving the sensor with an artificially
elevated reference level and thus become insensitive to touch. In this latter case, the sensor will compensate for the
object's removal very quickly, usually in only a few seconds.
With large values of C
S
and small values of C
X
, drift compensation will appear to operate more slowly than with the
converse. Note that the positive and negative drift compensation rates are different.
3.1.2 Threshold Calculation
The internal threshold level is fixed at one of two setting as determined by Table 2-1 on page 7. These settings are
fixed with respect to the internal reference level, which in turn will move in accordance with the drift compensation
mechanism.
The QT113B employs a hysteresis dropout below the threshold level of 17% of the delta between the reference and
threshold levels.
Threshold
Signal
Hysteresis
Reference
Output

QT113B-ISG

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
Capacitive Touch Sensors INTEGRATED-CIRCUIT
Lifecycle:
New from this manufacturer.
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