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VNQ830
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P28
Electric
al specif
icatio
ns
VNQ830
16/28
Doc ID 739
0
Rev 5
Figure 13.
I
LIM
vs T
case
Figure
14.
O
n-state resistance vs
V
CC
Figure 15.
Input high le
vel
Figure 16.
Input hysteresis
v
olt
age
Figure 17.
On-state
resist
a
nce vs T
ca
se
Figure 18.
Input low level
-50
-25
0
25
50
75
100
125
150
175
Tc (°
C)
0
2
4
6
8
10
12
14
16
18
20
Ili
m (A
)
Vcc=13V
5
1
01
52
02
53
03
54
0
Vcc
(V)
0
10
20
30
40
50
60
70
80
90
100
110
120
Ron (mOhm)
Iout=2A
Tc
=
- 4
0
°
C
T
c=25°C
T
c=150°C
-50
-25
0
25
50
75
100
125
150
175
Tc (°C
)
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
Vih (V
)
-50
-25
0
25
50
75
100
125
150
175
Tc (°C
)
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
Vhyst (V)
-50
-25
0
25
50
75
100
125
150
175
Tc (°
C)
0
20
40
60
80
100
120
140
160
Ron (mOhm)
Iout=2
A
Vcc=8V
; 13V & 36V
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
Vil (V)
Obsolete Product(s) - Obsolete Product(s)
VNQ83
0
Elec
trical
specifi
catio
ns
Doc I
D 7390
Rev 5
17/2
8
Figur
e 19.
St
atus
leakage
curren
t
Figure
20.
Status low out
put voltage
Figur
e 21.
St
atus
clamp vo
lt
age
Figure 22.
Open
-load on
-state detection
threshold
Figur
e 23.
Open-load
off-state voltage
detection threshold
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
0
0.01
0.0
2
0.03
0.04
0.05
Ilstat (uA)
Vstat=5V
-50
-25
0
25
50
75
100
125
150
175
Tc (°C
)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Vstat (V)
Ista
t=1.
6mA
-50
-25
0
25
50
75
100
125
150
175
Tc (°C
)
6
6.2
6.4
6.6
6.8
7
7.2
7.4
7.6
7.8
8
Vsc
l (V
)
Istat=
1mA
-50
-25
0
2
5
50
75
100
125
150
175
Tc (°C)
50
60
70
80
90
100
110
120
130
140
150
Iol (mA)
Vcc=13V
Vin=5V
-50
-25
0
25
50
75
100
125
150
175
Tc (°C
)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Vol (V
)
Vin=0V
Obsolete Product(s) - Obsolete Product(s)
Application informat
ion
VNQ830
18/28
Doc ID 739
0
Rev 5
3 Application
information
Figure 24.
Applica
tion schematic
Note:
Chann
els 3 and
4 hav
e the same
inter
nal circu
it as ch
annel
1 and 2.
3.1
GND protection ne
twork against
reverse battery
This se
ction
provid
es two sol
utions fo
r imp
lemen
ting a gr
ound prote
ction
network
against
reverse b
attery
.
3.1.1
Solution 1: a resis
tor in the ground line (R
GND
only)
This ca
n be us
ed with
any type
of loa
d.
The fol
lowing s
how how
to dimens
ion the
R
GND
resi
stor
:
1.
R
GND
≤
600
mV / 2(I
S(on)max
)
2. R
GND
≥(
-V
CC
) / (
-I
GND
)
V
CC1,2
OUTPUT2
+5V
R
prot
OUTPUT1
ST
A
TUS1
INP
UT1
+5V
ST
A
TUS2
INP
UT2
+5V
D
GND
R
GND
V
GND
GND1,2
GND3,4
OUTP
UT3
OUTPUT4
μ
C
V
CC3,4
ST
A
TUS
3
INP
UT3
ST
A
TUS4
INP
UT4
+5V
+5V
R
prot
R
prot
R
prot
R
prot
R
prot
R
prot
R
prot
D
ld
Obsolete Product(s) - Obsolete Product(s)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P28
VNQ830
Mfr. #:
Buy VNQ830
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Quad Channel Hi-Side
Lifecycle:
New from this manufacturer.
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