VNQ830 Application information
Doc ID 7390 Rev 5 19/28
where -I
GND
is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power dissipation in R
GND
(when V
CC
< 0 during reverse battery situations) is:
P
D
= (-V
CC
)
2
/ R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
GND
will produce a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
GND
) in the ground line
A resistor (R
GND
= 1 kΩ) should be inserted in parallel to D
GND
if the device will be driving
an inductive load. This small signal diode can be safely shared amongst several different
HSD. Also in this case, the presence of the ground network will produce a shift (600 mV) in
the input threshold and the status output values if the microprocessor ground is not common
with the device ground. This shift will not vary if more than one HSD shares the same
diode/resistor network. Series resistor in INPUT and STATUS lines are also required to
prevent that, during battery voltage transient, the current exceeds the Absolute Maximum
Rating. Safest configuration for unused INPUT and STATUS pin is to leave them
unconnected.
3.2 Load dump protection
D
ld
is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
CC
maximum DC rating. The same applies if the device is subject to transients on the V
CC
line that are greater than those shown in the ISO T/R 7637/1 table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the V
CC
line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prot
) in line to
prevent the microcontroller I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit
microcontroller I/Os:
-V
CCpeak
/ I
latchup
R
prot
(V
OHμC
- V
IH
- V
GND
) / I
IHmax
Obsolete Product(s) - Obsolete Product(s)
Application information VNQ830
20/28 Doc ID 7390 Rev 5
Example
For the following conditions:
V
CCpeak
= -100 V
I
latchup
20 mA
V
OHμC
4.5 V
5kΩ R
prot
65 kΩ.
Recommended values are:
R
prot
= 10 kΩ
3.4 Open load detection in off-state
Off-state open load detection requires an external pull-up resistor (R
PU
) connected between
OUTPUT pin and a positive supply voltage (V
PU
) like the +5V line used to supply the
microprocessor.
The external resistor has to be selected according to the following requirements:
1. No false open load indication when load is connected: in this case we have to avoid
V
OUT
to be higher than V
Olmin
; this results in the following condition
V
OUT
= (V
PU
/ (R
L
+ R
PU
))R
L
< V
Olmin.
2. No misdetection when load is disconnected: in this case the V
OUT
has to be higher than
V
OLmax
; this results in the following condition R
PU
< (V
PU
- V
OLmax
) / I
L(off2)
.
Because I
s(OFF)
may significantly increase if V
out
is pulled high (up to several mA), the pull-
up resistor R
PU
should be connected to a supply that is switched OFF when the module is in
standby.
Figure 25. Open-load detection in off-state
V
OL
V batt. V
PU
R
PU
R
L
R
DRIVER
+
LOGIC
+
-
INPUT
STATUS
V
CC
OUT
GROUND
I
L(off2)
Obsolete Product(s) - Obsolete Product(s)
VNQ830 Application information
Doc ID 7390 Rev 5 21/28
3.5 Maximum demagnetization energy (V
CC
= 13.5V)
Figure 26. Maximum turn-off current versus load inductance
Note: Values are generated with R
L
= 0 Ω.
In case of repetitive pulses, T
jstart
(at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves B and C.
1
10
100
0.1 1 10 100
L(mH)
I
LMAX (A)
V
IN
, I
L
t
Demagnetization
Demagnetization
Demagnetization
A = single pulse at T
Jstart
= 150 °C
B= repetitive pulse at T
Jstart
= 100 °C
C= repetitive pulse at T
Jstart
= 125 °C
A
B
C
Obsolete Product(s) - Obsolete Product(s)

VNQ830

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Quad Channel Hi-Side
Lifecycle:
New from this manufacturer.
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