IS62WV25616DBLL-45TI

Integrated Silicon Solution, Inc. — www.issi.com 1

Rev. D1

3/10/2015

Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-

pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon

Solution, Inc. receives written assurance to its satisfaction, that:

FEATURES

• High-speed access time: 35, 45, 55 ns

• CMOSlowpoweroperation

30 mW (typical) operating

 6µW(typical)CMOSstandby

• TTLcompatibleinterfacelevels

• Singlepowersupply

1.65V--2.2V V

dd (IS62WV25616DALL)

• IndustrialandAutomotivetemperaturesupport

• Lead-freeavailable

• 2CSoptionavailable

DESCRIPTION

TheISSIIS62WV25616DALLandIS62/65WV25616DBLL

arehigh-speed,lowpower,4MbitSRAMsorganizedas

256K words by 16 bits. It is fabricated using ISSI's high-

performanceCMOStechnology.Thishighlyreliableprocess

coupled with innovative circuit design techniques, yields

high-performance and low power consumption devices.

When CS1 is HIGH (deselected) or when CS2 is LOW

controls both writing and reading of the memory. A data byte

allows Upper Byte (UB)andLowerByte(LB) access.

TheIS62WV25616DALLandIS62/65WV25616DBLLare

packaged in the JEDEC standard 44-PinTSOP(TYPEII)

and 48-pin mini BGA (6mmx8mm).

FUNCTIONAL BLOCK DIAGRAM

MARCH 2015

2 Integrated Silicon Solution, Inc. — www.issi.com

PIN DESCRIPTIONS

Integrated Silicon Solution, Inc. — www.issi.com 3

Rev. D1

3/10/2015

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

Vterm TerminalVoltagewithRespecttoGND –0.5toVdd + 0.5 V

Vdd VddRelatestoGND –0.3to4.0 V

tstg StorageTemperature –65to+150 °C

Pt Power Dissipation 1.0 W

Notes:

1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto

thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions

C

i/O

 Input/OutputCapacitance VOut = 0V 8 pF

Notes:

1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.

2. Testconditions:T

a = 25°C, f=1MHz,Vdd = 3.3V.

TRUTH TABLE

I/O PIN

Mode WE CS1 CS2 OE LB UB I/O0-I/O7 I/O8-I/O15 VDD Current

NotSelected X H X X X X High-Z High-Z isb1, isb2

H L H L L L dOut dOut

 Write L L H X L H din High-Z iCC

  L L H X H L High-Z din

L L H X L L din din