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IS62WV25616DBLL-45TI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
IS62WV25616DALL/DBLL, IS65WV25616DBLL
4 Integrated Silicon Solution, Inc. — www.issi.com
Rev. D1
3/10/2015
AC TEST LOADS
Figure 1.
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
Figure 2.
AC TEST CONDITIONS
Parameter Unit Unit Unit
(2.3V-3.6V) (3.3V + 5%) (1.65V-2.2V)
InputPulseLevel 0.4VtoVdd - 0.3V 0.4V to Vdd - 0.3V 0.4V to Vdd - 0.3V
InputRiseandFallTimes 1V/ns 1V/ns 1V/ns
InputandOutputTiming VDD/2 VDD + 0.05 0.9V
andReferenceLevel(VRef) 2
OutputLoad SeeFigures1and2 SeeFigures1and2 SeeFigures1and2
R1( Ω ) 1005 1213 13500
R2( Ω ) 820 1378 10800
Vtm (V) 3.0V 3.3V 1.8V
R1
30 pF
Including
jig and
scope
R2
OUTPUT
VTM
Integrated Silicon Solution, Inc. — www.issi.com 5
Rev. D1
3/10/2015
IS62WV25616DALL/DBLL, IS65WV25616DBLL
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 2.3V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
VOH OutputHIGHVoltage Vdd = Min.,iOH = –1.0mA 1.8 — V
VOL OutputLOWVoltage Vdd = Min.,iOL = 2.1mA — 0.4 V
ViH Input HIGH Voltage 2.0 Vdd + 0.3 V
ViL InputLOWVoltage
(1)
–0.3 0.8 V
iLi InputLeakage GND≤ Vin ≤ Vdd
–1 1 µA
iLO OutputLeakage
GND ≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1.
ViL (min.) = –0.3V DC; ViL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
ViH (max.) = Vdd + 0.3V dC; ViH (max.) = Vdd + 2.0V aC(pulsewidth<10ns).Not100%tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 3.3V + 5%
Symbol Parameter Test Conditions Min. Max. Unit
VOH OutputHIGHVoltage Vdd = Min.,iOH = –1mA 2.4 — V
VOL OutputLOWVoltage Vdd = Min.,iOL = 2.1mA — 0.4 V
ViH Input HIGH Voltage 2 Vdd + 0.3 V
ViL InputLOWVoltage
(1)
–0.3 0.8 V
iLi InputLeakage GND≤ Vin ≤ Vdd
–1 1 µA
iLO OutputLeakage
GND ≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1.
ViL (min.) = –0.3V DC; ViL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
ViH (max.) = Vdd + 0.3V dC; ViH (max.) = Vdd + 2.0V aC(pulsewidth<10ns).Not100%tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 1.65V-2.2V
Symbol Parameter Test Conditions VDD Min. Max. Unit
VOH OutputHIGHVoltage iOH = -0.1mA 1.65-2.2V 1.4 — V
VOL OutputLOWVoltage iOL = 0.1mA 1.65-2.2V — 0.2 V
ViH Input HIGH Voltage 1.65-2.2V 1.4 Vdd + 0.2 V
ViL
(1)
InputLOWVoltage
1.65-2.2V –0.2 0.4 V
iLi InputLeakage GND≤ Vin ≤ Vdd
–1 1 µA
iLO OutputLeakage
GND ≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1.
ViL (min.) = –0.3V DC; ViL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
ViH (max.) = Vdd + 0.3V dC; ViH (max.) = Vdd + 2.0V aC(pulsewidth<10ns).Not100%tested.
IS62WV25616DALL/DBLL, IS65WV25616DBLL
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev. D1
3/10/2015
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-35 -45 -55
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
iCC VddDynamicOperating Vdd = Max., Com. — 20 — 15 — 15 mA
Supply Current iOut = 0 mA, f = fmaX Ind./AutoA1 — 25 — 18 — 15
CE = ViL Auto.A3 — 30 — 25 — 25
Vin ≥ Vdd – 0.3V, or typ.
(2)
10
Vin ≤ 0.4V
iCC1 Operating Vdd = Max., Com. — 3 — 3 — 3 mA
Supply Current iOut = 0 mA, f = 0 Ind./AutoA1 — 3 — 3 — 3
CE = ViL Auto.A3 — 3 — 3 — 3
Vin ≥ Vdd – 0.3V, or
Vin ≤ 0.4V
isb2 CMOSStandby Vdd = Max.,
Com.
— 5 — 5 — 5
µA
Current(CMOSInputs) CS1
≥
Vdd – 0.2V,
Ind./Auto A1
— 10 — 10
— 10
CS2
≤ 0.2V,
Auto. A3
—
30
— 30
— 30
Vin
≥
Vdd – 0.2V, or
typ.
(2)
2
Vin
≤
0.2V, f = 0
OR
ULBControl Vdd=Max.,CS1 = ViL, Cs2=ViH
Vin ≤ 0.2V, f = 0; UB / LB = Vdd–0.2V
Note:
1. At f = f
maX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
dd=3.0V,Ta = 25
o
Candnot100%tested.
OPERATING RANGE (VDD)
Range Ambient Temperature VDD (45 nS) VDD (35 nS)
Commercial 0°Cto+70°C 2.3V-3.6V 3.3V+5%
Industrial –40°Cto+85°C 2.3V-3.6V 3.3V+5%
Automotive(A1) –40°Cto+85°C 2.3V-3.6V 3.3V+5%
OPERATING RANGE (VDD)
Range Ambient Temperature VDD Speed
Commercial 0°Cto+70°C 1.65V-2.2V 45ns
Industrial –40°Cto+85°C 1.65V-2.2V 55ns
Automotive –40°Cto+125°C 1.65V-2.2V 55ns
OPERATING RANGE (VDD)
Range Ambient Temperature VDD (45 nS)
Automotive(A3) –40°Cto+125°C 2.3V-3.6V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

IS62WV25616DBLL-45TI

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IC SRAM 4M PARALLEL 44TSOP2
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