PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 3 of 15
NXP Semiconductors
PESDxS1UB series
ESD protection diodes in SOD523 package
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure 1.
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PP
peak pulse power 8/20 µs
[1]
PESD3V3S1UB - 330 W
PESD5V0S1UB - 260 W
PESD12VS1UB - 180 W
PESD15VS1UB - 160 W
PESD24VS1UB - 160 W
I
PP
peak pulse current 8/20 µs
[1]
PESD3V3S1UB - 18 A
PESD5V0S1UB - 15 A
PESD12VS1UB - 5 A
PESD15VS1UB - 5 A
PESD24VS1UB - 3 A
T
j
junction temperature - 150 °C
T
amb
operating ambient
temperature
−65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
capability
IEC 61000-4-2
(contact discharge)
[1]
PESD3V3S1UB - 30 kV
PESD5V0S1UB - 30 kV
PESD12VS1UB - 30 kV
PESD15VS1UB - 30 kV
PESD24VS1UB - 23 kV
PESDxS1UB series HBM MIL-STD883 - 10 kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
