PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 7 of 15
NXP Semiconductors
PESDxS1UB series
ESD protection diodes in SOD523 package
T
amb
= 25 °C
t
p
= 8/20 µs exponentially decay waveform,
see Figure 1
(1) PESD3V3S1UB and PESD5V0S1UB
(2) PESD12VS1UB, PESD15VS1UB; PESD24VS1UB
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
f = 1 MHz; T
amb
= 25 °C
(1) PESD3V3S1UB
(2) PESD5V0S1UB
f = 1 MHz; T
amb
= 25 °C
(1) PESD12VS1UB
(2) PESD15VS1UB
(3) PESD24VS1UB
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
001aaa147
10
3
10
2
10
4
P
pp
(W)
10
t
p
(µs)
110
4
10
3
10 10
2
(1)
(2)
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25°C)
V
R
(V)
054231
001aaa148
120
160
80
200
240
C
d
(pF)
40
(1)
(2)
V
R
(V)
0252010 155
001aaa149
20
30
10
40
50
C
d
(pF)
0
(1)
(3)
(2)
