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BGM1013,115

P1-P3P4-P6P7-P9P10-P12P13-P15
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
1.2 Features and benefits
Internally matched to 50
Good output match to 75
Very high gain; 35.5 dB at 1 GHz
Upper corner frequency at 2.1 GHz
31 dB flat gain up to 2.2 GHz application
14 dBm saturated output power at 1 GHz
High linearity (23 dBm IP3
out
and 43 dBc IM2)
40 dB isolation.
1.3 Applications
Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers
Cable systems
General purpose.
1.4 Quick reference data
BGM1013
MMIC wideband amplifier
Rev. 5 — 19 September 2011 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
S
DC supply voltage RF input; AC coupled - 5 6 V
I
S
DC supply current 23 27.5 33 mA
s
21
2
insertion power gain f = 1 GHz 34.5 35.5 36.2 dB
NF noise figure f = 1 GHz - 4.6 4.7 dB
P
L(sat)
saturated load power f = 1 GHz 13.0 14.0 - dBm
BGM1013 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 19 September 2011 2 of 15
NXP Semiconductors
BGM1013
MMIC wideband amplifier)
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1V
S
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN
132
4
56
sym062
1
6
4 2, 5
3
Table 3. Ordering information
Type number Package
Name Description Version
BGM1013 SC-88 plastic surface mounted package; 6 leads SOT363
Table 4. Marking codes
Type number Marking code
BGM1013 C4-
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
S
DC supply voltage RF input; AC coupled - 6 V
I
S
DC supply current - 35 mA
P
tot
total power dissipation T
sp
90 C - 200 mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
P
D
maximum drive power - 10 dBm
BGM1013 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 19 September 2011 3 of 15
NXP Semiconductors
BGM1013
MMIC wideband amplifier)
6. Recommended operating conditions
7. Thermal characteristics
8. Characteristics
Table 6. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
S
supply voltage 4.5 5.0 5.5 V
T
amb
ambient temperature 40 25 85 C
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point P
tot
=200mW; T
sp
90 C 300 K/W
Table 8. Characteristics
V
S
=5 V; I
S
= 27.5 mA; T
j
=25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
S
DC supply voltage RF input; AC coupled - 5 6 V
I
S
DC supply current 23 27.5 33 mA
s
21
2
insertion power gain f = 100 MHz 34.5 35.2 35.9 dB
f = 1 GHz 34.5 35.5 36.2 dB
f = 1.8 GHz 33.0 34.0 35.2 dB
f = 2.2 GHz 30.5 31.8 33.1 dB
f = 2.6 GHz 25.2 29.7 31.2 dB
f = 3 GHz 24.0 26.1 27.9 dB
s
11
2
input return loss f = 1 GHz 10.1 10.6 - dB
f = 2.2 GHz 9.3 10.2 - dB
s
22
2
output return loss Z
L
=50
f=1GHz 18 20 - dB
f = 2.2 GHz 13 16 - dB
Z
L
=75
f=1GHz 15 17 - dB
f = 2.2 GHz 12 15 - dB
s
12
2
isolation f = 1 GHz 40 42 - dB
f = 2.2 GHz 34 36 - dB
NF noise figure f = 1 GHz - 4.6 4.7 dB
f = 2.2 GHz - 4.9 5.1 dB
B bandwidth 3 dB below flat gain at f = 1 GHz - 2.1 - GHz
K stability factor f = 1 GHz 1.2 1.3 -
f=2.2GHz 0.9 1.0 -
P
L(sat)
saturated load power f = 1 GHz 13.0 14.0 - dBm
f = 2.2 GHz 9.0 10.2 - dBm
P1-P3P4-P6P7-P9P10-P12P13-P15

BGM1013,115

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Manufacturer:
NXP Semiconductors
Description:
RF Wireless Misc MMAMPLIFIER SOT-363
Lifecycle:
New from this manufacturer.
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