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BGM1013,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BGM1013
All informatio
n provided in this d
ocument is su
bject to legal dis
claimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 5 — 19 September 201
1
7 of 15
NXP Semiconductors
BGM1013
MMIC wideband am
plifier)
I
S
= 27.5 mA; V
S
= 5 V
;
P
D
=
35 dBm; Z
o
= 50
.
Fig 4.
Input reflection coefficient (s
11
); typical values
I
S
= 27.5 mA; V
S
= 5 V
;
P
D
=
35 dBm; Z
o
= 50
.
Fig 5.
Output reflec
tion coefficient
(s
22
); typical values
001aab399
90
°
−
90
°
5
0.2
+
0.2
0
+
2
+
5
−
5
−
2
−
0.2
+
0.5
−
0.5
+
1
−
1
2
1
10
0
0.2
0.6
0.4
0.8
1.0
1.0
−
45
°
−
135
°
45
°
135
°
180
°
0
°
0.5
3 GHz
100 MHz
001aab401
90
°
−
90
°
5
0.2
+
0.2
0
+
2
+
5
−
5
−
2
−
0.2
+
0.5
−
0.5
+
1
−
1
2
1
10
0
0.2
0.6
0.4
0.8
1.0
1.0
−
45
°
−
135
°
45
°
135
°
180
°
0
°
0.5
3 GHz
100 MHz
BGM1013
All informatio
n provided in this d
ocument is su
bject to legal dis
claimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 5 — 19 September 201
1
8 of 15
NXP Semiconductors
BGM1013
MMIC wideband am
plifier)
I
S
= 27.5 mA; V
S
= 5 V
; P
D
=
35 dBm; Z
o
= 50
.P
D
=
35 dBm;
Z
o
= 50
.
(1)
I
S
= 32.6 mA; V
S
= 5.5 V
.
(2)
I
S
= 27.5 mA; V
S
= 5 V
.
(3)
I
S
= 21.5 mA; V
S
= 4.5 V
.
Fig 6.
Isolation
(
s
12
2
) as a functi
on of frequency
;
typical valu
es
Fig 7.
Insertion g
ain (
s
21
2
) as a functi
on of
frequency; typical values
f = 1 GHz; Z
o
= 50
.
(1)
V
S
= 5.5 V
.
(2)
V
S
= 5 V
.
(3)
V
S
= 4.5 V
.
f = 2.2 GHz; Z
o
= 50
.
(1)
V
S
= 5.5 V
.
(2)
V
S
= 5 V
.
(3)
V
S
= 4.5 V
.
Fig 8.
Load pow
er as a functi
on of drive power at
1 GHz; typical values
Fig 9.
Load power as
a function of
drive power at
2.2 GHz; typical va
lues
001aab402
f (MHz)
0
3000
2000
1000
−
30
−
20
−
40
−
10
0
|s
12
|
2
(dB)
−
50
001aab404
f (MHz)
0
3000
2000
1000
30
25
35
40
|s
21
|
2
(dB)
20
(1)
(2)
(3)
001aab406
P
D
(dBm)
−
45
−
15
−
25
−
35
0
10
20
P
L
(dBm)
−
10
(1)
(2)
(3)
001aab408
P
D
(dBm)
−
40
−
10
−
20
−
30
(1)
(2)
(3)
0
5
−
5
10
15
P
L
(dBm)
−
10
BGM1013
All informatio
n provided in this d
ocument is su
bject to legal dis
claimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 5 — 19 September 201
1
9 of 15
NXP Semiconductors
BGM1013
MMIC wideband am
plifier)
Z
o
= 50
.
(1)
V
S
= 5.5 V
.
(2)
V
S
= 5 V
.
(3)
V
S
= 4.5 V
.
I
S
= 27.5 mA; V
S
= 5 V
; Z
o
= 50
.
Fig
10.
Noise fi
gure as a function
of frequency
; typical
values
Fig 1
1.
St
ability factor as a fu
nction of frequency;
typical values
f (MHz)
0
2500
2000
1000
1500
500
001aab410
5
4.5
5.5
6
NF
(dB)
4
(1)
(2)
(3)
f (MHz)
0
4000
3000
1000
2000
001aab411
2
3
1
4
5
K
0
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BGM1013,115
Mfr. #:
Buy BGM1013,115
Manufacturer:
NXP Semiconductors
Description:
RF Wireless Misc MMAMPLIFIER SOT-363
Lifecycle:
New from this manufacturer.
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