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LE2432RDXATDG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
1 Publication Order Number :
LE2432RDXA/D
www.onsemi.com
© Semiconductor Components Industries, LLC, 2016
August 2016 - Rev. 1
ORDERING INFORMATION
See detailed ordering and shipping information on page 17 of this data sheet.
LE2432RDXA
32 kb I
2
C CMOS Serial EEPROM
Overview
The LE2432RDXA is two-wire serial interface EEPROM (Electrically
Erasable and Programmable ROM). This device realizes high speed and a high
level reliability by high performance CMOS EEPROM technology. This
device is compatible with I
2
C memory protocol, therefore it is best suited for
application that requires re-writable nonvolatile parameter memory.
Function
 Capacity : 32k bits (4k 8 bits)
Single supply voltage : 1.7 V to 3.6 V
Operating temperature : 40ºC to +85ºC
Interface : Two wire serial interface (I
2
C Bus*)
 Operating clock frequency : 400 kHz (Fast), 1000 kHz (Fast-Plus)
Low Power consumption
: Standby : 2 µA (max.)
: Active (Read, 400kHz) : 0.5 mA (max.)
Active (Read, 1000kHz) : 2.0 mA (max.)
Automatic page write mode : 32 Bytes
Read mode : Sequential Read and random read
Slave Address : Slave address in 7 bit format is 054 (S2 = 1, S1 = 0, S0 = 0)
Erase/Write cycles : 10
6
cycles (Page Write)
Data Retention : 20 years
Pull-up resistance: 5 kΩ
(typ.) on WP pin with a built-in pull-up resister
High reliability : Adopts proprietary symmetric memory array configuration (USP6947325)
Hardware write protect feature
Noise filters connected to SCL and SDA pins
Incorporates a feature to prohibit write operations under low voltage conditions.
Package : LE2432RDXA WLP6(1.200.80) 0.33 mm height
Specifications
Absolute Maximum Ratings
at Ta = 25C
Parameter Symbol Conditions Ratings Unit
Supply voltage 0.5 to +4.6 V
DC input voltage 0.5 to V
DD
+0.5 V
Over-shoot voltage 1.0 to V
DD
+1.0 V
Storage temperature Tstg 65 to +150 C
WLCSP6, 0.80x1.20
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
* This product is licensed from Silicon Storage Technology, Inc. (USA).
LE2432RDXA
www.onsemi.com
2
Recommended Operating Conditions
Parameter Symbol Conditions
Ratings
Unit
min typ max
Operating supply voltage 1.7 3.6 V
Operating temperature 40 +85 C
DC Electrical Characteristics
Parameter Symbol Conditions
Spec.
Unit
min typ max
Supply current at reading I
CC
1
f = 400 kHz, V
DD
= V
DD
Max
0.5
mA
f = 1000 kHz, V
DD
= V
DD
Max
2.0
Supply current at writing I
CC
2
f = 1000 kHz / 400 kHz,
tWC = 5 ms, V
DD
= V
DD
Max
3.0 mA
Standby current I
SB
V
IN
= V
DD
or V
SS
2 µA
Input leakage current I
LI
V
IN
= V
SS
to V
DD
, V
DD
= V
DD
Max
2.0 +2.0 µA
Output leakage current I
LO
V
IN
= V
SS
to V
DD
, V
DD
= V
DD
Max
2.0 +2.0 µA
Input Low voltage V
IL
V
DD
0.3 V
Input High voltage V
IH
V
DD
0.7 V
Output Low voltage
V
OL2
I
OL
= 1.0 mA, V
DD
= 1.7 V
0.2 V
I
OL
= 1.2 mA, V
DD
= 2.0 V
V
OL1
I
OL
= 2.1 mA, V
DD
= 2.0 V
0.4 V
I
OL
= 3.0 mA, V
DD
= 2.5 V
Capacitance
at Ta = 25C, f = 1 MHz
Parameter Symbol Conditions max Unit
In/Output pin capacitance C
I/O
V
I/O
= 0 V (SDA) 10 pF
Input pin capacitance C
I
V
IN
= 0 V 10 pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices.
Pull-up resistance (WP) at Ta = 40 to 85 C
Parameter Symbol Conditions min typ max Unit
Pull up resistance R Resistance between WP to V
DD
2 4000 5500 7000
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
LE2432RDXA
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3
Fast-Plus (1000 kHz)
Parameter Symbol
Spec.
Unit
min typ max
Slave mode SCL clock frequency f
SCLS
0 1000 kHz
SCL clock low time t
LOW
500 ns
SCL clock high time t
HIGH
300 ns
SDA output delay time t
AA
50 450 ns
SDA data output hold time t
DH
50 ns
Start condition setup time t
SU.STA
250 ns
Start condition hold time t
HD.STA
250 ns
Data in setup time t
SU.DAT
50 ns
Data in hold time t
HD.DAT
0 ns
Stop condition setup time t
SU.STO
250 ns
SCL SDA rise time t
R
120 ns
SCL SDA fall time t
F
120 ns
Bus release time t
BUF
500 ns
Noise suppression time t
SP
50 ns
Write time t
WC
5 ms
Fast (400 kHz)
Parameter Symbol
Spec.
Unit
min typ max
Slave mode SCL clock frequency f
SCLS
0 400 kHz
SCL clock low time t
LOW
1200 ns
SCL clock high time t
HIGH
600 ns
SDA output delay time t
AA
100 900 ns
SDA data output hold time t
DH
100 ns
Start condition setup time t
SU.STA
600 ns
Start condition hold time t
HD.STA
600 ns
Data in setup time t
SU.DAT
100 ns
Data in hold time t
HD.DAT
0 ns
Stop condition setup time t
SU.STO
600 ns
SCL SDA rise time t
R
300 ns
SCL SDA fall time t
F
300 ns
Bus release time t
BUF
1200 ns
Noise suppression time t
SP
50 ns
Write time t
WC
5 ms
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

LE2432RDXATDG

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Buy LE2432RDXATDG
Manufacturer:
ON Semiconductor
Description:
EEPROM 32K BIT I2C FASTPLUS EEP
Lifecycle:
New from this manufacturer.
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