M29F200BT, M29F200BB Command interface
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4.0.10 Erase Resume command
The Erase Resume command must be used to restart the Program/Erase Controller from
Erase Suspend. An erase can be suspended and resumed more than once.
Table 4. Commands, 16-bit mode, BYTE = V
IH
Command
Length
Bus Write operations
1st 2nd 3rd 4th 5th 6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset
1X F0
3 555 AA 2AA 55 X F0
Auto Select 3 555 AA 2AA 55 555 90
Program 4 555 AA 2AA 55 555 A0 PA PD
Unlock Bypass 3 555 AA 2AA 55 555 20
Unlock Bypass
Program
2 X A0 PA PD
Unlock Bypass Reset 2 X 90 X 00
Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Block Erase 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30
Erase Suspend 1 X B0
Erase Resume 1 X 30
Command interface M29F200BT, M29F200BB
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Table 5. Commands, 8-bit mode, BYTE = V
IL
(1)(2)(3)
Command
Length
Bus Write operations
1st 2nd 3rd 4th 5th 6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset
(4)
1X F0
3 AAA AA 555 55 X F0
Auto Select
(5)
3 AAA AA 555 55 AAA 90
Program
(6)
4 AAA AA 555 55 AAA A0 PA PD
Unlock Bypass
(7)
3 AAA AA 555 55 AAA 20
Unlock Bypass
Program
(6)
2 X A0 PA PD
Unlock Bypass Reset
(8)
2X 90 X 00
Chip Erase
(6)
6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10
Block Erase
(6)
6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30
Erase Suspend
(9)
1X B0
Erase Resume
(10)
1X 30
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
2. All values in the table are in hexadecimal.
3. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A16, DQ8-DQ14 and DQ15
are Don’t Care. DQ15A–1 is A–1 when BYTE
is V
IL
or DQ15 when BYTE is V
IH
.
4. After a Read/Reset command, read the memory as normal until another command is issued.
5. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
6. After a Program, Unlock Bypass Program, Chip Erase, or Block Erase command, read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase
Command with additional Bus Write Operations until the Timeout Bit is set.
7. After the Unlock Bypass command, issue Unlock Bypass Program or Unlock Bypass Reset commands.
8. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
9. After the Erase Suspend command, read non-erasing memory blocks as normal, issue Auto Select and Program
commands on non-erasing blocks as normal.
10. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode.
M29F200BT, M29F200BB Command interface
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Table 6. Program, Erase times and Program, Erase endurance cycles
(T
A
= 0 to 70°C, –40 to 85°C or –40 to 125°C)
Parameter Min Typ
(1)
Typical after
100k W/E Cycles
(1)
Max Unit
Chip Erase (All bits in the memory set to ‘0’) 0.8 0.8 s
Chip Erase 2.5 2.5 10 s
Block Erase (64 Kbytes) 0.6 0.6 4 s
Program (Byte or Word) 8 8 150 µs
Chip Program (Byte by Byte) 2.3 2.3 9 s
Chip Program (Word by Word) 1.2 1.2 4.5 s
Program/Erase Cycles (per Block) 100,000 cycles
1. T
A
= 25°C, V
CC
= 5V.

M29F200BB45N1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
NOR Flash 256Kx8 or 128Kx16 45
Lifecycle:
New from this manufacturer.
Delivery:
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