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M29F200BB45N1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39
DC and ac parameters M29F200BT, M29F200BB
28/39
7 DC and ac parameters
This section summarizes the operating measurement conditions, and the dc and ac
characteristics of the device. The parameters in the dc and ac characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 9: Operating and ac measurement conditions. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Figure 6. AC testing input output waveform
Table 9. Operating and ac measurement conditions
Parameter
M29F200B
45 / 50 70 / 90
AC Test Conditions High Speed Standard
Load Capacitance (C
L
) 30pF 100pF
Input Rise and Fall Times ≤ 10ns ≤ 10ns
Input Pulse Voltages 0 to 3V 0.45 to 2.4V
Input and Output Timing Ref. Voltages 1.5V 0.8V and 2.0V
Table 10. Capacitance (T
A
= 25 °C, f = 1 MHz)
(1)
1. Sampled only, not 100% tested.
Symbol Parameter Test condition Min Max Unit
C
IN
Input Capacitance V
IN
= 0V 6 pF
C
OUT
Output Capacitance V
OUT
= 0V 12 pF
AI01275B
3V
High Speed
0V
1.5V
2.4V
Standard
0.45V
2.0V
0.8V
M29F200BT, M29F200BB DC and ac parameters
29/39
Figure 7. AC testing load circuit
Table 11. DC characteristics (T
A
= 0 to 70°C, –40 to 85°C or –40 to 125°C)
Symbol Parameter Test Condition Min Typ
(1)
1. T
A
= 25°C, V
CC
= 5V.
Max Unit
I
LI
Input Leakage Current 0V ≤ V
IN
≤ V
CC
±1 µA
I
LO
Output Leakage Current 0V ≤ V
OUT
≤ V
CC
±1 µA
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
,
f = 6MHz
620mA
I
CC2
Supply Current (Standby) TTL E = V
IH
1mA
I
CC3
Supply Current (Standby)
CMOS
E
= V
CC
±0.2V,
RP
= V
CC
±0.2V
30 100 µA
I
CC4
(2)
2. Sampled only, not 100% tested.
Supply Current
(Program/Erase)
Program/Erase
Controller active
20 mA
V
IL
Input Low Voltage –0.5 0.8 V
V
IH
Input High Voltage 2 V
CC
+0.5 V
V
OL
Output Low Voltage I
OL
= 5.8mA 0.45 V
V
OH
Output High Voltage TTL I
OH
= –2.5mA 2.4 V
Output High Voltage CMOS I
OH
= –100µAV
CC
–0.4 V
V
ID
Identification Voltage 11.5 12.5 V
I
ID
Identification Current A9 = V
ID
100 µA
V
LKO
(2)
Program/Erase Lockout Supply
Voltage
3.2 4.2 V
AI03027
1.3V
OUT
C
L
= 30pF or 100pF
C
L
includes JIG capacitance
3.3k
Ω
1N914
DEVICE
UNDER
TEST
DC and ac parameters M29F200BT, M29F200BB
30/39
Figure 8. Read Mode ac waveforms
Table 12. Read ac characteristics (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
Symbol Alt Parameter Test Condition
M29F200B
Unit
45 50 70 / 90
t
AVAV
t
RC
Address Valid to Next Address
Valid
E = V
IL
,
G = V
IL
Min455070ns
t
AVQV
t
ACC
Address Valid to Output Valid
E
= V
IL
,
G
= V
IL
Max455070ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output
Transition
G
= V
IL
Min000ns
t
ELQV
t
CE
Chip Enable Low to Output Valid G = V
IL
Max455070ns
t
GLQX
(1)
t
OLZ
Output Enable Low to Output
Transition
E
= V
IL
Min000ns
t
GLQV
t
OE
Output Enable Low to Output Valid E = V
IL
Max253030ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z G = V
IL
Max151820ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z E = V
IL
Max151820ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or
Address Transition to Output
Transition
Min000ns
t
ELBL
t
ELBH
t
ELFL
t
ELFH
Chip Enable to BYTE Low or High Max 5 5 5 ns
t
BLQZ
t
FLQZ
BYTE Low to Output Hi-Z Max 15 15 20 ns
t
BHQV
t
FHQV
BYTE High to Output Valid Max 30 30 30 ns
1. Sampled only, not 100% tested.
AI02915
tAVAV
tAVQV tAXQX
tELQX tEHQZ
tGLQV
tGLQX tGHQX
VALID
A0-A16/
A–1
G
DQ0-DQ7/
DQ8-DQ15
E
tELQV
tEHQX
tGHQZ
VALID
tBHQV
tELBL/tELBH tBLQZ
BYTE
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39

M29F200BB45N1

Mfr. #:
Buy M29F200BB45N1
Manufacturer:
STMicroelectronics
Description:
NOR Flash 256Kx8 or 128Kx16 45
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