NXP Semiconductors
PBSS5360PAS
60 V, 3A PNP low VCEsat (BISS) transistor
PBSS5360PAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 12 October 2015 10 / 17
aaa-019937
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-019938
-10
-1
-10
-2
-1
V
CEsat
(V)
-10
-3
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
aaa-019939
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-019940
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
10
-1
1
10
10
2
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 15. Collector-emitter saturation resistance as a
function of collector current; typical values
