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PBSS5360PASX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
NXP Semiconductors
PBSS5360P
AS
60 V
, 3A PNP low VCEsat (BISS) transistor
PBSS5360PAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
12 October 2015
6 / 17
006aac000
10
1
10
2
10
3
Z
th(j-a)
(K/W
)
10
- 1
10
- 5
10
10
- 2
10
-
4
10
2
10
-
1
t
p
(s)
10
-
3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, mounting pad for collector 6 cm
2
Fig. 4.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013299
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0.75
0
0.50
0.33
0.20
0.10
0.05
0.02
0.01
FR4 PCB, 4-layer copper
, standard footprint
Fig. 5.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBSS5360P
AS
60 V
, 3A PNP low VCEsat (BISS) transistor
PBSS5360PAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
12 October 2015
7 / 17
aaa-013300
10
1
10
2
Z
th(j-a)
(K/W)
10
-1
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0
0.20
0.10
0.05
0.02
0.01
0.75
0.33
0.50
FR4 PCB, 4-layer copper
, mounting pad for collector 1 cm
2
Fig. 6.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab982
10
- 5
10
10
- 2
10
-
4
10
2
10
-
1
t
p
(s)
10
-
3
10
3
1
10
1
10
2
Z
th(j-a)
(K/W
)
10
- 1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 7.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBSS5360P
AS
60 V
, 3A PNP low VCEsat (BISS) transistor
PBSS5360PAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
12 October 2015
8 / 17
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
V
CB
= -64 V; I
E
= 0 A; T
amb
= 25 °C
-
-
-100
nA
I
CBO
collector-base cut-off
current
V
CB
= -64 V; I
E
= 0 A; T
j
= 150 °C
-
-
-50
µA
I
CES
collector-emitter cut-off
current
V
CE
= -48 V; V
BE
= 0 V; T
amb
= 25 °C
-
-
-100
nA
I
EBO
emitter-base cut-off
current
V
EB
= -6.4 V; I
C
= 0 A; T
amb
= 25 °C
-
-
-100
nA
V
CE
= -5 V; I
C
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
150
250
-
130
220
-
V
CE
= -5 V; I
C
= -500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
120
200
-
V
CE
= -5 V; I
C
= -2 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
100
160
-
h
FE
DC current gain
V
CE
= -5 V; I
C
= -3 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
80
125
-
I
C
= -0.5 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-55
-100
mV
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-95
-170
mV
I
C
= -2 A; I
B
= -200 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-170
-320
mV
V
CEsat
collector-emitter
saturation voltage
-
-260
-450
mV
R
CEsat
collector-emitter
saturation resistance
I
C
= -3 A; I
B
= -300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
87
150
mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= -2 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-0.9
-1
V
V
BEon
base-emitter turn-on
voltage
V
CE
= -5 V; I
C
= -1 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-0.8
-1
V
t
d
delay time
-
12
-
ns
t
r
rise time
-
95
-
ns
t
on
turn-on time
-
107
-
ns
t
s
storage time
-
160
-
ns
t
f
fall time
-
50
-
ns
t
off
turn-off time
I
C
= -2 A; I
Bon
= -0.1 A; I
Boff
= 0.1 A;
T
amb
= 25 °C
-
210
-
ns
f
T
transition frequency
V
CE
= -10 V; I
C
= -100 mA;
f = 100 MHz; T
amb
= 25 °C
65
120
-
MHz
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
PBSS5360PASX
Mfr. #:
Buy PBSS5360PASX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBSS5360PAS/HUSON3/REEL 7" Q1/
Lifecycle:
New from this manufacturer.
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