NXP Semiconductors
PBSS5360PAS
60 V, 3A PNP low VCEsat (BISS) transistor
PBSS5360PAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 12 October 2015 4 / 17
T
amb
(°C)
-75 22512525
aaa-013298
1
2
3
P
tot
(W)
0
(1) + (2)
(3)
(6)
(4) + (5)
(1) Ceramic PCB, single-sided copper, standard footprint
(2) FR4 PCB, 4-layer copper, 1 cm
2
(3) FR4 PCB, single-sided copper, 6 cm
2
(4) FR4 PCB, single-sided copper, 1 cm
2
(5) FR4 PCB, 4-layer copper, standard footprint
(6) FR4 PCB, single-sided copper, standard footprint
Fig. 1. Power derating curves
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 250 K/W
[2][3] - - 125 K/W
[4] - - 100 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[5][6] - - 60 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[5] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[6]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
.
