Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 13
Publication Order Number:
MUN2111T1/D
1
MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: Class 1
ESD Rating – Machine Model: Class B
The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
°C/W
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
540 (Note 1)
370 (Note 2)
°C/W
Thermal Resistance –
Junction-to-Lead
R
θ
JL
264 (Note 1)
287 (Note 2)
°C/W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SC–59
CASE 318D
PLASTIC
MARKING DIAGRAM
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
PIN 2
BASE
(INPUT)
R1
R2
2
1
3
6x M
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
*See device marking table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
Preferred devices are recommended choices for future use
and best overall value.
6x = Specific Device Code*
M = Date Code
http://onsemi.com
MUN2111T1 Series
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN2111T1 SC–59 6A 10 10 3000/Tape & Reel
MUN2112T1 SC–59 6B 22 22 3000/Tape & Reel
MUN2113T1 SC–59 6C 47 47 3000/Tape & Reel
MUN2114T1 SC–59 6D 10 47 3000/Tape & Reel
MUN2115T1 (Note 3) SC–59 6E 10 3000/Tape & Reel
MUN2116T1 (Note 3) SC–59 6F 4.7 3000/Tape & Reel
MUN2130T1 (Note 3) SC–59 6G 1.0 1.0 3000/Tape & Reel
MUN2131T1 (Note 3) SC–59 6H 2.2 2.2 3000/Tape & Reel
MUN2132T1 (Note 3) SC–59 6J 4.7 4.7 3000/Tape & Reel
MUN2133T1 (Note 3) SC–59 6K 4.7 47 3000/Tape & Reel
MUN2134T1 (Note 3) SC–59 6L 22 47 3000/Tape & Reel
MUN2136T1 SC–59 6N 100 100 3000/Tape & Reel
MUN2137T1 SC–59 6P 47 22 3000/Tape & Reel
MUN2140T1 (Note 3) SC–59 6T 47 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
100 nAdc
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0) I
CEO
500 nAdc
Emitter–Base Cutoff Current MUN2111T1
(V
EB
= 6.0 V, I
C
= 0) MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.20
mAdc
Collector–Base Breakdown Voltage (I
C
= 10 µA, I
E
= 0) V
(BR)CBO
50 Vdc
Collector–Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
MUN2111T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5)
DC Current Gain MUN2111T1
(V
CE
= 10 V, I
C
= 5.0 mA) MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
120
60
100
140
140
250
250
5.0
15
27
140
130
150
140
250
Collector–Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA) MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
MUN2136T1
MUN2137T1
(I
C
= 10 mA, I
B
= 5.0 mA) MUN2131T1
(I
C
= 10 mA, I
B
= 1.0 mA) MUN2116T1
MUN2132T1
MUN2134T1
MUN2140T1
V
CE(sat)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k) MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k) MUN2113T1
MUN2140T1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k) MUN2136T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k) MUN2137T1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

MUN2133T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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