MUN2111T1 Series
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10
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1
75°C
25°C
–25°C
Figure 28. Maximum Collector Voltage versus
Collector Current
Figure 29. DC Current Gain
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 32. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
76543210
I
C
, COLLECTOR CURRENT (mA)
100101
100
10
1
0.01
1000
V
CE(sat)
, MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
h
FE
, DC CURRENT GAIN
1.2
0.6
6050403020100
0
C
ob
, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
10987
100
121086420
1
10
181614 20
V
in
, INPUT VOLTAGE (VOLTS)
I
C
/I
B
= 10
75°C
25°C
T
A
= –25°C
V
CE
= 10 V
75°C
25°C
T
A
= –25°C
V
O
= 5 V
V
O
= 0.2 V
75°C
25°C
T
A
= –25°C
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
MUN2111T1 Series
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11
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1
Figure 33. Maximum Collector Voltage versus
Collector Current
Figure 34. DC Current Gain
Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
35302520151050
I
C
, COLLECTOR CURRENT (mA)
100101
100
10
0.01
1000
V
CE(sat)
, MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
h
FE
, DC CURRENT GAIN
1.4
0.6
6050403020100
0
C
ob
, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
11987
100
151050
1
10
20 25
V
in
, INPUT VOLTAGE (VOLTS)
504540
0.1
0.01
10
1.2
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
75°C
25°C
T
A
= –25°C
V
O
= 5 V
75°C
25°C
T
A
= –25°C
V
O
= 0.2 V
75°C
25°C
T
A
= –25°C
I
C
/I
B
= 10
V
CE
= 10 V
75°C
25°C
T
A
= –25°C
MUN2111T1 Series
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12
P
D
=
T
J(max)
– T
A
R
θ
JA
P
D
=
150°C – 25°C
370°C/W
= 338 milliwatts
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied dur-
ing cooling
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
INFORMATION FOR USING THE SC–59 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
SC–59 POWER DISSIPATION
The power dissipation of the SC–59 is a function of the
pad size. This can vary from the minimum pad size for sol-
dering to the pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by T
J(max)
, the maximum rated junction temperature
of the die, Rθ
JA
, the thermal resistance from the device
junction to ambient; and the operating temperature, T
A
. Us-
ing the values provided on the data sheet, P
D
can be calcu-
lated as follows.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T
A
of 25°C, one
can calculate the power dissipation of the device which in
this case is 338 milliwatts.
The 370°C/W assumes the use of the recommended foot-
print on a glass epoxy printed circuit board to achieve a
power dissipation of 338 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, the power dissipation can be doubled us-
ing the same footprint.
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
mm
inches
0.039
1.0
0.094
0.8
2.4
0.031
0.95
0.037
0.95
0.037

MUN2133T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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