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MUN2133T1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
MUN2111T1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 6) (Continued)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kΩ) MUN2130T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ) MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
MUN2140T1
V
OH
4.9 – – Vdc
Input Resistor MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
kΩ
Resistor Ratio MUN2111T1/MUN2112T1/MUN2113T1/
MUN2136T1
MUN2114T1
MUN2115T1/MUN2116T1/MUN2140T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
MUN2137T1
R
1
/R
2
0.8
0.17
–
0.8
0.055
0.38
1.7
1.0
0.21
–
1.0
0.1
0.47
2.1
1.2
0.25
–
1.2
0.185
0.56
2.6
6. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
–50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (5°C)
P
D,
POWER DISSIPATION (mW)
R
θ
JA
= 370°C/W
250
300
LOAD
+12 V
Figure 2. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
MUN2111T1 Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2111T1
I
C
, COLLECTOR CURRENT (mA)
100
10
1
0.1
0.01
0.001
V
in,
INPUT VOLTAGE (VOLTS)
I
C,
COLLECTOR CURRENT (mA)
h
FE,
DC CURRENT GAIN
Figure 3. V
CE(sat)
vs. I
C
0
T
A
= –25°C
25°C
12345
678 910
Figure 4. DC Current Gain
Figure 5. Output Capacitance Figure 6. Output Current vs. Input Voltage
Figure 7. Input Voltage vs. Output Current
0.01
20
0.1
1
0406080
1000
1 10 100
I
C
, COLLECTOR CURRENT (mA)
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
T
A
= –25°C
75°C
75°C
50010203040
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
0
T
A
=–2°5C
25°C
75°C
25°C
V
CE
= 10 V
V
O
= 5 V
V
in
, INPUT VOLTAGE (VOLTS)
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
–25°C
V
CE(sat),
MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
C
ob,
CAPACITANCE (pF)
T
A
=75°C
I
C
/I
B
= 10
25°C
V
O
= 0.2 V
MUN2111T1 Series
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2112T1
V
in,
INPUT VOLTAGE (VOLTS)
I
C,
COLLECTOR CURRENT (mA)
C
ob,
CAPACITANCE (pF)
h
FE,
DC CURRENT GAIN
V
CE(sat),
MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
T
A
= –25°C
Figure 8. V
CE(sat)
vs. I
C
Figure 9. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
10
0
T
A
=75°C
Figure 10. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
010 2030
75°C
100
10
1
0.1
40 50
Figure 11. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001
0
1234
V
in
, INPUT VOLTAGE (VOLTS)
25°C
5678910
Figure 12. Input Voltage vs. Output Current
0.01
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
020 6080
75°C
25°C
T
A
= –25°C
50
010203040
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
25°C
V
CE
= 10 V
I
C
/I
B
= 10
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
O
= 5 V
25°C
75°C
–25°C
T
A
= –25°C
V
O
= 0.2 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MUN2133T1

Mfr. #:
Buy MUN2133T1
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Lifecycle:
New from this manufacturer.
Delivery:
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