Si7848BDP
www.vishay.com
Vishay Siliconix
S17-1826-Rev. D, 11-Dec-17
4
Document Number: 74632
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
Safe Operating Area, Junction-to-Ambient
V
SD
- Source-to-Drain Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
60
10
1
- Source Current (A)I
S
T
J
= 150 °C
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
V
GS
- Gate-to-Source Voltage (V)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0246810
- On-Resistance (Ω)R
DS(on)
125 °C
25 °C
I
D
= 18 A
0.001
0
1
50
20
30
10 6000.1
Time (s)
10
40
Power (W)
1000.01
1
0.1 1 10 100
0.01
10
1 ms
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single pulse
10 ms
DC
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
minimum V
GS
at which R
DS(on)
is specified
Limited by R
(1)
DS(on)
100 µs
BVDSS limited
100
100 ms
1 s
10 s
Si7848BDP
www.vishay.com
Vishay Siliconix
S17-1826-Rev. D, 11-Dec-17
5
Document Number: 74632
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
10
20
30
40
50
60
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
0
8
16
24
32
40
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
Si7848BDP
www.vishay.com
Vishay Siliconix
S17-1826-Rev. D, 11-Dec-17
6
Document Number: 74632
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74632
.
10
-3
10
-2
1 1 006010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1.
Duty cycle, D =
2. Per unit base = R
thJA
= 58 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface mounted
P
DM
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02

SI7848BDP-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet