Philips Semiconductors Product specification
PowerMOS transistor BUK100-50GL
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Continuous off-state drain source V
IS
= 0 V - 50 V
voltage
1
V
IS
Continuous input voltage - 0 6 V
I
D
Continuous drain current T
mb
≤
25 ˚C; V
IS
= 5 V - 13.5 A
I
D
Continuous drain current T
mb
≤
100 ˚C; V
IS
= 5 V - 8.5 A
I
DRM
Repetitive peak on-state drain current T
mb
≤ 25 ˚C; V
IS
= 5 V - 54 A
P
D
Total power dissipation T
mb
≤ 25 ˚C - 40 W
T
stg
Storage temperature - -55 150 ˚C
T
j
Continuous junction temperature
2
normal operation - 150 ˚C
T
sold
Lead temperature during soldering - 250 ˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
ISP
Protection supply voltage
3
for valid protection 4 - V
Over temperature protection
V
DDP(T)
Protected drain source supply voltage V
IS
= 5 V - 50 V
Short circuit load protection
V
DDP(P)
Protected drain source supply voltage
4
V
IS
= 5 V - 35 V
P
DSM
Instantaneous overload dissipation T
mb
= 25 ˚C - 0.6 kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
DROM
Repetitive peak clamping current V
IS
= 0 V - 15 A
E
DSM
Non-repetitive clamping energy T
mb
≤ 25 ˚C; I
DM
= 15 A; - 200 mJ
V
DD
≤ 20 V; inductive load
E
DRM
Repetitive clamping energy T
mb
≤ 95 ˚C; I
DM
= 4 A; - 20 mJ
V
DD
≤ 20 V; f = 250 Hz
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P)
maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
November 1996 2 Rev 1.300
