OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

RT9715BGS

P1-P3P4-P6P7-P9P10-P11
Philips Semiconductors Product specification
PowerMOS transistor BUK100-50GL
Logic level TOPFET
TRANSFER CHARACTERISTICS
T
mb
= 25 ˚C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
Forward transconductance V
DS
= 10 V; I
DM
= 7.5 A t
p
≤ 300 µs; 5 9 - S
δ ≤ 0.01
I
D(SC)
Drain current
1
V
DS
= 13 V; V
IS
= 5 V - 25 - A
SWITCHING CHARACTERISTICS
T
mb
= 25 ˚C. R
I
= 50 Ω . Refer to waveform figures and test circuits.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
d on
Turn-on delay time V
DD
= 13 V; V
IS
= 5 V - 1.5 - µs
t
r
Rise time resistive load R
L
= 4 Ω -8-µs
t
d off
Turn-off delay time V
DD
= 13 V; V
IS
= 0 V - 6 - µs
t
f
Fall time resistive load R
L
= 4 Ω - 4.5 - µs
t
d on
Turn-on delay time V
DD
= 13 V; V
IS
= 5 V - 1.5 - µs
t
r
Rise time inductive load I
DM
= 3 A - 1 - µs
t
d off
Turn-off delay time V
DD
= 13 V; V
IS
= 0 V - 10 - µs
t
f
Fall time inductive load I
DM
= 3 A - 0.5 - µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
S
Continuous forward current T
mb
≤ 25 ˚C; V
IS
= 0 V - 13.5 A
REVERSE DIODE CHARACTERISTICS
T
mb
= 25 ˚C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SDS
Forward voltage I
S
= 15 A; V
IS
= 0 V; t
p
= 300 µs - 1.0 1.5 V
t
rr
Reverse recovery time not applicable
2
----
ENVELOPE CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
L
d
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
1 During overload before short circuit load protection operates.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
November 1996 4 Rev 1.300
Philips Semiconductors Product specification
PowerMOS transistor BUK100-50GL
Logic level TOPFET
Fig.2. Normalised limiting power dissipation.
P
D
% = 100
⋅
P
D
/P
D
(25 ˚C) = f(T
mb
)
Fig.3. Normalised continuous drain current.
I
D
% = 100
⋅
I
D
/I
D
(25 ˚C) = f(T
mb
); conditions: V
IS
= 5 V
Fig.4. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.5. Transient thermal impedance.
Z
th
j-mb
= f(t); parameter D = t
p
/T
Fig.6. Typical output characteristics, T
j
= 25 ˚C.
ID = f(V
DS
); parameter V
IS
; t
p
= 250
µ
s & t
p
< t
d sc
Fig.7. Typical on-state characteristics, T
j
= 25 ˚C.
ID = f(V
DS
); parameter V
IS
; t
p
= 250
µ
s
0 20 40 60 80 100 120 140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
t
D
D =
BUK100-50GL
0 20 40 60 80 100 120 140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0 4 8 12 16 20 24 28 32
BUK100-50GL
VDS / V
ID / A
40
35
30
25
20
15
10
5
0
3
2.5
3.5
4
4.5
5
5.5
6
VIS / V =
1 100
VDS / V
100
10
1
0.1
BUK100-50GL
10
ID & IDM / A
Overload protection characteristics not shown
DC
100 us
1 ms
10 ms
100 ms
10 us
tp =
RDS(ON) = VDS/ID
0 2 4
BUK100-50GL
VDS / V
ID / A
40
35
30
25
20
15
10
5
0
3
4
5
6
3.5
4.5
5.5
531
VIS / V =
November 1996 5 Rev 1.300
Philips Semiconductors Product specification
PowerMOS transistor BUK100-50GL
Logic level TOPFET
Fig.8. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
IS
; t
p
= 250
µ
s
Fig.9. Typical transfer characteristics, T
j
= 25 ˚C.
I
D
= f(V
IS
) ; conditions: V
DS
= 10 V; t
p
= 250
µ
s
Fig.10. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 10 V; t
p
= 250
µ
s
Fig.11. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25 ˚C = f(T
j
); I
D
= 7.5 A; V
IS
= 5 V
Fig.12. Typical overload protection characteristics.
t
d sc
= f(P
DS
); conditions: V
IS
≥
4 V; T
j
= 25 ˚C.
Fig.13. Normalised limiting overload dissipation.
P
DSM
% =100
⋅
P
DSM
/P
DSM
(25 ˚C) = f(T
mb
)
0 10 20 30
BUK100-50GL
ID / A
RDS(ON) / Ohm
0.20
0.15
0.10
0.05
0
5.5
6
54.543.5VIS / V =
5152535
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0 2 4 6 8
BUK100-50GL
VIS / V
ID / A
40
35
30
25
20
15
10
5
0
0.01 1
PDS / kW
td sc / ms
BUK100-50GL
100
10
1
0.1
0.1
PDSM
0 20 40
ID / A
gfs / S
BUK100-50GL
12
11
10
9
8
7
6
5
4
3
2
1
0
10 30 50
-60 -40 -20 0 20 40 60 80 100 120 140
Tmb / C
PDSM%
120
100
80
60
40
20
0
November 1996 6 Rev 1.300
P1-P3P4-P6P7-P9P10-P11

RT9715BGS

Mfr. #:
Buy RT9715BGS
Manufacturer:
Description:
IC PWR SW USB 2A 8SOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet