SI4914BDY-T1-E3 Datasheet SI4914BDY-T1-GE3, SI4914BDY-T1-E3 | P1-P3

Vishay Siliconix

Si4914BDY

Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• LITTLE FOOT

®

Plus Integrated Schottky

• 100 % R

g

and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Notebook PC

- System Power dc-to-dc

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

a

Q

g

(Typ.)

Channel-1

30

0.021 at V

GS

= 10 V

8.4

6.7

0.027 at V

GS

= 4.5 V

7.4

Channel-2

0.020 at V

GS

= 10 V

8

d

7.0

0.025 at V

GS

= 4.5 V

8

d

SCHOTTKY PRODUCT SUMMARY

V

DS

(V)

V

SD

(V)

Diode Forward Voltage

I

F

(A)

30 0.50 V at 1.0 A 2.0

D

1

G

1

D

1

S

1

/D

2

G

2

S

1

/D

2

S

2

S

1

/D

2

SO-8

5

6

7

8

T op V i e w

2

3

4

1

Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free)

Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

1

G

2

S

2

N-Channel 2

MOSFET

Schottky Diod

e

G

1

N-Channel 1

MOSFET

S

1

/D

2

Notes:

a. Based on T

C

= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Package limited.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Channel-1 Channel-2 Unit

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

20

Continuous Drain Current (T

J

= 150 °C)

a, b

T

C

= 25 °C

I

D

8.4

8

d

A

T

C

= 70 °C

6.7 7.4

T

A

= 25 °C

6.7

b, c

7.4

b, c

T

A

= 70 °C

5.3

b, c

5.7

b, c

Pulsed Drain Current (10 µs Pulse Width)

I

DM

40 40

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

2.4 2.8

T

A

= 25 °C

1.0

b, c

1.1

b, c

PulseD Source-Drain Current

I

SM

40 40

Single-Pulse Avalanche Current

L = 0.1 mH

I

AS

15

Single-Pulse Avalanche Energy

E

AS

11.2 mJ

Maximum Power Dissipation

a, b

T

C

= 25 °C

P

D

2.7 3.1

W

T

C

= 70 °C

1.7 2.0

T

A

= 25 °C

1.7

b, c

2.0

b, c

T

A

= 70 °C

1.1

b, c

1.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

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Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

Vishay Siliconix

Si4914BDY

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Channel-1 Channel-2

Unit Typ. Max. Typ. Max.

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

59 70 52 62.5

°C/W

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

36 45 32 40

MOSFET SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.

a

Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

Ch-1 30

V

Ch-2 30

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

Ch-1 35 mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

Ch-1 - 6.2

V

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

Ch-1 1.2 2.7

Ch-2 1.2 2.7

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= 20 V

Ch-1 100

nA

Ch-2 100

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 30 V, V

GS

= 0 V

Ch-1 1

µA

Ch-2 100

V

DS

= 30 V, V

GS

= 0 V, T

J

= 85 °C

Ch-1 15

Ch-2 10000

On-State Drain Current

b

I

D(on)

V

DS

= 5 V, V

GS

= 10 V

Ch-1 20

A

Ch-2 20

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 10 V, I

D

= 8 A

Ch-1 0.0165 0.021

Ω

V

GS

= 10 V, I

D

= 8 A

Ch-2 0.0155 0.020

V

GS

= 4.5 V, I

D

= 6 A

Ch-1 0.0215 0.027

V

GS

= 4.5 V, I

D

= 6 A

Ch-2 0.020 0.025

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 8 A

Ch-1 29

S

V

DS

= 15 V, I

D

= 8 A

Ch-2 33

Diode Forward Voltage

b

V

SD

I

S

= 1.7 A, V

GS

= 0 V

Ch-1 0.77 1.1

V

I

S

= 1 A, V

GS

= 0 V

Ch-2 0.46 0.5

Dynamic

a

Total Gate Charge

Q

g

Channel-1

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 8 A

Channel-2

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 8 A

Ch-1 6.7 10.5

nC

Ch-2 7.0 11.0

Gate-Source Charge

Q

gs

Ch-1 2.8

Ch-2 2.8

Gate-Drain Charge

Q

gd

Ch-1 2.0

Ch-2 2.0

Gate Resistance

R

g

Ch-1 2.9 6.0

Ω

Ch-2 2.0 4.0

Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

www.vishay.com

3

Vishay Siliconix

Si4914BDY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.

a

Max. Unit

Dynamic

a

Tu r n - On D e l ay T i m e

t

d(on)

Channel-1

V

DD

= 15 V, R

L

= 3 Ω

I

D

≅ 5 A, V

GEN

= 10 V, R

g

= 1 Ω

Channel-2

V

DD

= 15 V, R

L

= 3 Ω

I

D

≅ 5 A, V

GEN

= 10 V, R

g

= 1 Ω

Ch-1 9 18

ns

Ch-2 10 20

Rise Time

t

r

Ch-1 10 20

Ch-2 9 18

Turn-Off Delay Time

t

d(off)

Ch-1 16 32

Ch-2 16 32

Fall Time

t

f

Ch-1 9 18

Ch-2 8 16

Source-Drain Reverse Recovery Time

t

rr

I

F

= 2.2 A, dI/dt = 100 A/µs

Ch-1 35 55

I

F

= 2.2 A, dI/dt = 100 A/µs

Ch-2 21 35

Body Diode Reverse Recovery Charge

Q

rr

I

F

= 2.2 A, dI/dt = 100 A/µs

Ch-1 40

nC

I

F

= 2.2 A, dI/dt = 100 A/µs

Ch-2 11

Reverse Recovery Fall Time

t

a

I

F

= 2.2 A, dI/dt = 100 A/µs

Ch-1 19

ns

I

F

= 2.2 A, dI/dt = 100 A/µs

Ch-2 11

Reverse Recovery Rise Time

t

b

I

F

= 2.2 A, dI/dt = 100 A/µs

Ch-1 16

I

F

= 2.2 A, dI/dt = 100 A/µs

Ch-2 10

SI4914BDY-T1-E3

SI4914BDY-T1-E3

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