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SI4914BDY-T1-E3
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
7
Vishay Siliconix
Si4914BDY
CHANNEL-1 TYPICAL CHARAC
TERISTICS
25 °C, unless otherwise noted
Normalized Thermal T
ransient Impedance, Junction
-to-Ambient
10
-3
10
-2
1
10
1000
10
-1
10
-4
100
0.2
0.1
0.05
0.02
Sq
u
are
W
a
v
eP
u
lse D
u
ration (s)
N
ormalized Effecti
v
e T
ransient
Thermal Impedance
1
0.1
0.01
Single P
u
lse
t
1
t
2
N
otes:
P
DM
1. D
u
ty Cycle, D =
2. Per Unit Base = R
thJA
=1
2
0
°
C
/
W
3. T
JM
- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. S
u
rface Mo
u
nted
D
u
ty Cycle = 0.5
Normalized Thermal Transien
t Impedance, Junction
-to-Foot
10
-3
10
-2
0
1
1
10
-1
10
-4
0.2
0.1
D
u
ty Cycle =
0.5
Sq
u
are
W
a
v
eP
u
lse D
u
ration (s)
N
ormalized Effecti
v
e T
ransient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single P
u
lse
www.vishay.com
8
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
Vishay Siliconix
Si4914BDY
CHANNEL-2 TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
- Drain C
u
rrent (A)
I
D
V
GS
= 10
V
thr
u
5
V
3
V
4
V
0.010
0.016
0.022
0.02
8
0.034
0.040
0
1
02
03
04
05
0
- On-Resistance (
Ω
)
R
DS(on)
I
D
- Drain C
u
rrent (A)
V
GS
=4
.
5
V
V
GS
=1
0
V
0
2
4
6
8
10
0
3.4
6.
8
10.2
13.6
17.0
I
D
=
8
A
- Gate-to-So
u
rce
V
oltage (
V
)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=1
0
V
V
DS
=1
5
V
V
DS
=2
0
V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
0.4
0.
8
1.2
1.6
2.0
01
.
2
2
.
4
3
.
6
4
.
8
6.0
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
- Drain C
u
rrent (A)
I
D
T
J
= 25 °C
T
J
= - 55 °C
T
J
= 125 °C
C
rss
0
240
4
8
0
720
960
1200
0
6
12
1
8
24
30
C
oss
C
iss
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
C - Capacitance (pF)
0.7
0.9
1.1
1.3
1.5
1.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- J
u
nction Temperat
u
re (°C)
(
N
ormalized)
- On-Resistance
R
DS(on)
I
D
=7
.
5A
V
GS
=1
0
V
V
GS
=4
.
5
V
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
9
Vishay Siliconix
Si4914BDY
CHANNEL-2 TYPICAL CHARAC
TERISTICS
25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Reverse Current Schottky
0.1
1
10
100
0
0.2
0.4
0.6
0.
8
1.0
1.2
T
J
= 150 °C
V
SD
- So
u
rce-to-Drain
V
oltage (
V
)
- So
u
rce C
u
rrent (A)
I
S
T
J
= 25 °C
0
25
50
75
100
125
150
T
J
- Temperat
u
re (°C)
- Re
v
erse (A)
I
R
V
DS
=3
0
V
V
DS
=2
0
V
V
DS
=1
0
V
10
-3
10
-5
10
-6
10
-4
10
-2
10
-1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Powe
r, Junction
-to-Ambien
t
0
0.02
0.04
0.06
0.0
8
0.10
0246
8
10
- On-Resistance (
Ω
)
R
DS(on)
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
T
A
= 25 °C
T
A
= 125 °C
0
20
40
60
8
0
100
0
1
1
1
0
0
.
00
.
0
1
Ti
me
(
s
)
Po
w
er (
W
)
0.1
Safe Operating Area
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
*
V
GS
> minim
u
m
V
GS
at
w
hich R
DS(on)
is
specified
100
1
0.1
1
10
100
0.01
10
1m
s
- Drain C
u
rrent (A)
I
D
0.1
T
A
= 25 °C
Single P
u
lse
10 ms
100 ms
DC
1s
10 s
Limited
b
yR
DS(on)
*
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
SI4914BDY-T1-E3
Mfr. #:
Buy SI4914BDY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
Lifecycle:
New from this manufacturer.
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