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SI4914BDY-T1-E3
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
www.vishay.com
4
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
Vishay Siliconix
Si4914BDY
CHANNEL-1 TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
00
.
5
1
.
0
1
.
5
2
.
0
2
.
5
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
- Drain C
u
rrent (A)
I
D
V
GS
=1
0
V
thr
u
5
V
3
V
4
V
0
0.01
0.02
0.03
0.04
0.05
0
1
02
03
04
05
0
- On-Resistance (
Ω
)
R
DS(on)
I
D
- Drain C
u
rrent (A)
V
GS
=4
.
5
V
V
GS
=1
0
V
0
2
4
6
8
10
0
3.2
6.4
9.6
12.
8
16.0
I
D
=
8
A
- Gate-to-So
u
rce
V
oltage (
V
)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=1
0
V
V
DS
=1
5
V
V
DS
=2
0
V
Transfer Characteristics
Capacitance
On-Resistance vs. Junctio
n Temperature
0
0.4
0.
8
1.2
1.6
2.0
012345
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
- Drain C
u
rrent (A)
I
D
T
C
= 25 °C
T
J
= - 55 °C
T
C
= 125 °C
C
rss
0
200
400
600
8
00
1000
0
6
12
1
8
24
30
C
oss
C
iss
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
C - Capacitance (pF)
0.7
0.9
1.1
1.3
1.5
1.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- J
u
nction Temperat
u
re (°C)
(
N
ormalized)
- On-Resistance
R
DS(on)
I
D
=7A
V
GS
=1
0
V
V
GS
=4
.
5
V
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
5
Vishay Siliconix
Si4914BDY
CHANNEL-1 TYPICAL CHARAC
TERISTICS
25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Vo
ltage
0
0.2
0.4
0.6
0.
8
1.0
1.2
V
SD
- So
u
rce-to-Drain
V
oltage (
V
)
- So
u
rce C
u
rrent (A)
I
S
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50
- 25
0
25
50
75
100
125
150
I
D
= 250
µ
A
V
ariance (
V
)
V
GS(th)
T
J
- Temperat
u
re (°C)
I
D
=5m
A
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Powe
r, Junction
-to-Ambien
t
0
0.02
0.04
0.06
0.0
8
0.10
0246
8
10
- On-Resistance (
Ω
)
R
DS(on)
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
T
A
= 25 °C
T
A
= 125 °C
0
20
40
60
8
0
100
0
1
1
1
0
0
.
00
.
0
1
T
ime (s)
Po
w
er (
W
)
0.1
Safe Operating Area
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
*
V
GS
> minim
u
m
V
GS
at
w
hich R
DS(on)
is
specified
100
1
0.1
1
10
100
0.01
10
1m
s
- Drain C
u
rrent (A)
I
D
0.1
T
A
=2
5
°
C
Single P
u
lse
10 ms
100 ms
DC
10 s
Limited
b
yR
DS(on)
*
1s
www.vishay.com
6
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
Vishay Siliconix
Si4914BDY
CHANNEL-1 TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional
heatsinking is used. It is used to deter
mine the current rating,
when this rating
falls below the pa
ckage
limit.
Current Derating*
0
2
4
6
8
10
0
25
50
75
100
125
150
T
C
- Case Temperat
u
re (°C)
I
D
- Drain C
u
rrent (A)
Power, Junction-to
-Foot
0
0.7
1.4
2.1
2.
8
3.5
0
25
50
75
100
125
150
T
C
- Case Temperat
u
re (°C)
Po
w
er (
W
)
Power, Junction-to-Am
bient
0
0.3
0.6
0.9
1.2
1.5
0
25
50
75
100
125
150
T
A
- Am
b
ient Temperat
u
re (°C)
Po
w
er (
W
)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
SI4914BDY-T1-E3
Mfr. #:
Buy SI4914BDY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
Lifecycle:
New from this manufacturer.
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SI4914BDY-T1-GE3
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